Hostname: page-component-586b7cd67f-2plfb Total loading time: 0 Render date: 2024-11-29T08:13:51.714Z Has data issue: false hasContentIssue false
  • English
  • Français

Analysis of Cu(InGa)Se2 Alloy Film Optical Properties and the Effect of Cu Off-Stoichiometry

Published online by Cambridge University Press:  01 February 2011

P. D. Paulson ,
S. H. Stephens  and
W. N. Shafarman
P. D. Paulson
Affiliation:
Institute of Energy Conversion, University of Delaware, Newark, DE 19716, USA Miasolé, San Jose, CA 95131, USA
S. H. Stephens
Affiliation:
Institute of Energy Conversion, University of Delaware, Newark, DE 19716, USA
W. N. Shafarman
Affiliation:
Institute of Energy Conversion, University of Delaware, Newark, DE 19716, USA
Get access

Abstract

Variable angle spectroscopic ellipsometry has been used to characterize Cu(InGa)Se2 thin films as a function of relative Ga content and to study the effects of Cu off-stoichiometry. Uniform Cu(InGa)Se2 films were deposited on Mo-coated soda lime glass substrates by elemental evaporation with a wide range of relative Cu and Ga concentrations. Optical constants of Cu(InGa)Se2 were determined over the energy range of 0.75–C4.6 eV for films with 0 ≤ Ga/(In+Ga) ≤ 1 and used to determine electronic transition energies. Further, the changes in the optical constants and electronic transitions as a function of Cu off-stoichiometry were determined in Cu-In-Ga-Se films with Cu atomic concentration varying from 10 to 25 % and Ga/(In+Ga) = 0.3. Films with Cu in the range 16–24 % are expected to contain 2 phases so an effective medium approximation is used to model the data. This enables the relative volume fractions of the two phases, and hence composition, to be determined. Two distinctive features are observed in the optical spectra as the Cu concentration decreases. First, the fundamental bandgaps are shifted to higher energies. Second, the critical point features at higher energies become broader suggesting degradation of the crystalline quality of the material.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 865: Symposium F – Thin-Film Compound Semiconductor Photovoltaics , 2005 , F1.4
Copyright
Copyright © Materials Research Society 2005

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Shafarman, W.N. and Stolt, L. in Handbook of Photovoltaic Science and Engineering, edited by Luque, A. and Hegedus, S (Wiley and Sons, Chichester UK, 2003) 567–616.Google Scholar
2 Gödecke, T., Haalboom, T. and Ernst, F., Z. Metallkd. 91, 622 (2000).Google Scholar
3 Herberholz, R., Raul, U., Schock, H.W., Haalboom, T., Gödecke, T., Ernst, F., Beilharz, C., Benz, K.W., and Cahen, D., Eur. Phys. J. Appl. Phys. 6, 131 (1999).Google Scholar
4 Schmid, D., Ruckh, M., Grunwald, F., Schock, H., J. Appl. Phys. 73, 2902 (1993).Google Scholar
5 Paulson, P.D., Birkmire, R.W., Shafarman, W.N., J. Appl. Phys. 94, 879 (2003).Google Scholar
6 Alonso, M.I., Garriga, M., Durante Rincón, C.A., Hernández, E. and León, M., Appl. Phys. A 74, 659 (2002).Google Scholar
7 Aspnes, D.E., Thin Sol. Films 89, 249 (1982).Google Scholar
8 Albin, D.S., Carapella, J.J, Tuttle, J.R. and Noufi, R., Mater. Res. Soc. Symp. Proc. 228, 267 (1991).Google Scholar
9 Wei, S.H. and Zunger, A., J. Appl. Phys. 78, 3846 (1995).Google Scholar