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Analysis of Anomalous Peak Heights in DlTS of MBE-Grown Aluminum Gallium Arsenide

Published online by Cambridge University Press:  26 February 2011

W. Lim ,
L. P. Trombetta  and
Keith Jamison
W. Lim
Affiliation:
Space Vacuum Epitaxy Center, University of Houston, Houston, TX 77204
L. P. Trombetta
Affiliation:
Space Vacuum Epitaxy Center, University of Houston, Houston, TX 77204
Keith Jamison
Affiliation:
Space Vacuum Epitaxy Center, University of Houston, Houston, TX 77204
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Abstract

DLTS data taken on MBE grown AlGaAs films show peak heights which increase, maximize, and then decrease with increasing sample temperature. This behavior is difficult to explain within the context of conventional DLTS analysis. We suggest that the data can be accounted for by a trap with a temperature dependent capture cross section in conjunction with a model described by Lee and Borrego in which electron and hole emission rates are comparable. Using this analysis, we obtain an effective trap depth Eeff of 0.35 eV and a capture cross section activation energy Eσ 0.25 eV.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 209: Symposium K – Defects in Materials , 1990 , 427
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

1. Lee, W. I. and Borrego, J. M., J. Appl. Phys. 63 (11), 5357 (1988)Google Scholar
2. Rees, G. J. et al. . J. Phys. C., 13, (1980) 6157 Google Scholar