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Analysis for the Characterization of Oxygen Implanted Silicon (SIMOX) by Spectroscopic Ellipsometry†

Published online by Cambridge University Press:  26 February 2011

M.G. Doss ,
D. Chandler-Horowitz ,
J. F. Marchiando ,
S. Krause  and
S. Seraphin
M.G. Doss
Affiliation:
Rudolph Research, Flanders, NJ 07836
D. Chandler-Horowitz
Affiliation:
NIST, Gaithersburg, MD 20899
J. F. Marchiando
Affiliation:
NIST, Gaithersburg, MD 20899
S. Krause
Affiliation:
Arizona State University, Tempe, AZ 85287
S. Seraphin
Affiliation:
(Visitserngtrakul), University of Arizona, Tucson, AZ 85721
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Abstract

Samples of SIMOX have been prepared by implantation in a high-current implanter (density ≍ 1 mA/cm2) and by annealing at 1300°C for 6 hours. Transmission electron microscopy reveals unusual structure in these samples. Spectroscopic ellipsometry has been used to analyze these structures. Ellipsometric measurements were collected at an angle of incidence of 75. deg, with photon energies from 1.5 to 5.0 eV, and using a rotating polarizer configuration. The measurements were analyzed with three models: a three-layer model, a four-layer model, and a five-layer model. The five-layer model provided the best fit of the three. This model identified a layer of crystalline Si inclusions (“islands”) within the SiO2 layer. A method is presented that provides initial estimates for the thicknesses of the top three layers to help start the regression analysis.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 209: Symposium K – Defects in Materials , 1990 , 493
Copyright
Copyright © Materials Research Society 1991

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Footnotes

†

Contribution of National Institute of Standards and Technology; not subject to copyright.

References

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