Hostname: page-component-586b7cd67f-rcrh6 Total loading time: 0 Render date: 2024-11-25T17:49:06.279Z Has data issue: false hasContentIssue false
  • English
  • Français

Analysis and Comparison of EL2 Concentration and Stress Distribution in Undoped LEC-Grown Semi-Insulating GaAs Ingots

Published online by Cambridge University Press:  25 February 2011

P. Dobrilla  and
J. S. Blakemore
P. Dobrilla
Affiliation:
Oregon Graduate Center, Beaverton, Oregon 97006-1999
J. S. Blakemore
Affiliation:
Oregon Graduate Center, Beaverton, Oregon 97006-1999
Get access

Abstract

Near-IR absorption mapping has been used for polished GaAs wafers (0.5 mm thick) cut at intervals along the seed-to-tail length of (100)-oriented LEC-grown semi-insulating (SI) ingots. Some 2000 points are measured, point by point, over a wafer's area, usually near 1.0 μm for EL2 mapping, and near 1.4 μm for observation of stress interferograms. For the results presented here (high pressure LEC crystals from a major commercial supplier), stress maps display the fourfold symmetry predicted in thermoelastic models. The EL2 maps do not necessarily display the same symmetry, especially for wafers from near the tail end of an ingot.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 69: Symposium D – Materials Characterization , 1986 , 213
Copyright
Copyright © Materials Research Society 1986

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Jordan, A. S., Caruso, R., and Von Neida, A. R., Bell Syst. Tech. J. 59, 593 (1980).CrossRefGoogle Scholar
2. Blakemore, J. S. and Dobrilla, P., J. Appl. Phys. 58, 204 (1985).CrossRefGoogle Scholar
3. Dobrilla, P., Blakemore, J. S., Gleason, K. R., and McCamant, A. J., in Microscopic Identification of Electronic Defects in Semiconductors, edited by Johnson, N. M., Bishop, S. G., and Watkins, G. D. (MRS Symposium Proceedings Volume No. 46, 1985), p. 219.CrossRefGoogle Scholar
4. Martin, G. M., Jacob, G., Goltzene, A., and Schwab, C., Inst. Phys. Conf. Ser., No. 59, 281 (1981).Google Scholar
5. Dobrilla, P. and Blakemore, J. S., Appl. Phys. Lett. 48, No. 19 (1986).CrossRefGoogle Scholar
6. Dobrilla, P. and Blakemore, J. S., J. Appl. Phys. 58, 208 (1985).CrossRefGoogle Scholar
7. Higginbotham, C. W., Cardona, M., and Pollak, F. H., Phys. Rev. 184, 821 (1969).CrossRefGoogle Scholar
8. Weber, E. R., Ennen, H., Kaufmann, U., Windschief, J., and Schneider, J., J. Appl. Phys. 53, 6140 (1982).CrossRefGoogle Scholar
9. Skolnick, M. S., Hope, D. A. O., and Cockayne, B., in Semi-Insulating III-V Materials: Kah-nee-ta 1984, edited by Look, D. C. and Blakemore, J. S. (Shiva Publishing, Nantwich, UK, 1984), p. 446.Google Scholar
10. Kobayashi, N. and Iwaki, T., J. Cryst. Growth 73, 96 (1985).CrossRefGoogle Scholar