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An Investigation of a-Si:H Thin Film Transistors by A Comparison of Transient Measurements and Numerical Simulations.

Published online by Cambridge University Press:  21 February 2011

M.F. Willums ,
M. Hack ,
P.G. Lecomber  and
J. Shaw
M.F. Willums
Affiliation:
University of Dundee, Dundee DD14HN, Scotland
M. Hack
Affiliation:
Xerox Palo Alto Research Center, Palo Alto, CA 94304, USA
P.G. Lecomber
Affiliation:
University of Dundee, Dundee DD14HN, Scotland
J. Shaw
Affiliation:
Xerox Design Research Institute, Ithaca, NY 14853, USA
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Abstract

Transient measurements of the source-drain current ISD of amorphous silicon (a-Si:H) thin film transistors are compared with the results of two dimensional simulations. In particular, we have investigated the effect of different amorphous silicon layer thicknesses on the transient response. It is found that the dynamic response of a transistor with 0.4 μm a-Si:H is significantly slower than that of a device with only 0.06 μm of a-Si:H.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 985
Copyright
Copyright © Materials Research Society 1992

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References

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