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An Exploration of the Copper CMP Removal Mechanism

Published online by Cambridge University Press:  10 February 2011

Peter Renteln  and
Ton Ninh
Peter Renteln
Affiliation:
Advanced Products Research and Development Laboratory (APRDL), Motorola, 3501 Ed Bluestein Blvd., Austin, Texas 78721
Ton Ninh
Affiliation:
Advanced Products Research and Development Laboratory (APRDL), Motorola, 3501 Ed Bluestein Blvd., Austin, Texas 78721
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Abstract

Copper CMP is emerging as the next generation process technology enabling feature size reduction to .15μm and beyond[1]. We propose a copper removal mechanism in the context of a slurry consisting of an oxidizer and an abrasive. The body of evidence suggests that we are polishing in an oxidation complex rate limited regime. We observed low removal rate of copper in the absence of either oxidizer or abrasive, but rate was still dependent on CMP parameters and strongly tied to temperature. Any proposed mechanism must explain the observed dependence of rate on CMP aggressiveness and the role of each of the components. For the slurry used in this work we propose that an increase in temperature resulting from an increase in CMP intensity drives the kinetics of the oxidation reaction, and that the removal process can be classified as temperature-activated, abrasion assisted dissolution.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 566: Symposium P – Chemical-Mechanical Poilshing-Fundamentals and Challenges , 1999 , 155
Copyright
Copyright © Materials Research Society 2000

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References

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