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Published online by Cambridge University Press: 01 February 2011
An evaluation of an algorithm used to extract Threading Screw Dislocation defect data from Synchrotron White Beam X-Ray Topographical images of SiC wafers is reported.This extraction involves a two-fold process; firstly the algorithm highlights the appropriate defect and secondly updates the counter to provide a final result of defect count.The result of the automated algorithm is compared to hand counts in all cases, this allowing a critical analysis of the technique.Improvements to this algorithm have been made since last reported by the same authors, which are discussed. The analysis herein was also performed on a much larger sample of SiC wafer images than previously used by the same authors [1] allowing a better judgment of performance and critical evaluation.The algorithm is also compared with a previous algorithm that was used.Advantages and deficiencies in the algorithm are outlined and other potential avenues for extraction of the data are also discussed.