Hostname: page-component-cd9895bd7-hc48f Total loading time: 0 Render date: 2024-12-27T02:04:13.550Z Has data issue: false hasContentIssue false
  • English
  • Français

An Atomistic Study of the Nickel-Alumina Interfacial Reactions

Published online by Cambridge University Press:  22 February 2011

Q. Zhong  and
F. S. Ohuchi
Q. Zhong
Affiliation:
Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA 19104
F. S. Ohuchi
Affiliation:
Central Research and Development Department, E. I. duPont de Nemours and Company, Experimental Station, Building 356, Wilmington, DE 19898
Get access

Abstract

The initial stage of formation of the Ni/A12O3 interface under different conditions was studied by various surface science techniques. Nickel was deposited in situ in a UHV system onto the basal plane of a sapphire substrate at various temperatures and oxygen partial pressures. The interfacial reaction processes were simultaneously monitored by XPS. When Ni was deposited at elevated temperatures and in the presence of sufficient oxygen, the NiAl204 spinel was formed epitaxially on the Al2O3 substrate, as confirmed by LEED. While under UHV conditions (<4×10−11 torr) and at elevated temperatures (<800°C), the Al2O3 was partially reduced by Ni, and the evidence of Ni-Al intermetallic alloy formation was observed. Further efforts include the construction of a UHV system capable of preparing interfaces suitable for interfacial structure and adhesion studies.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 153: Symposium J – Interfaces Between Polymers, Metals, and Ceramics , 1989 , 71
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Mehan, R.L. and Noore, M.J., Composite Materials, vol. 4, edited by Kreider, K.G., pp. 159–227.Google Scholar
2. Moore, B., Bose, A., German, R.M. and Stoloff, N.S., (in press).Google Scholar
3. Johnson, K.H. and Pepper, S.V., J. Appl. Phys. 53 (10), 6634 (1982).Google Scholar
4. Anderson, A.B., Mehandru, S.P. and Simialek, J.L., J. Electrochem. Soc 1985 (7), 1695.Google Scholar
5. Ohuchi, F.S., (to be appeared in Script. Met.).Google Scholar
6. Zhong, Q. and Ohuchi, F.S., (to be published).Google Scholar
7. Trumble, K.P., Ruhle, M. and Wasynczk, J.A., (conference presentation).Google Scholar
8. Pettit, F.S., Randklev, E.H. and Felten, E.J., J. Amer. Ceram. Soc., 49 (4), 199 (1986).Google Scholar