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An Assessment of ECR Argon Plasma Etching Damage on Si and SiO2 Interfaces

Published online by Cambridge University Press:  25 February 2011

C. W. Nam ,
S. Ashok ,
W. Tsai  and
M. E. Day
C. W. Nam
Affiliation:
Center for Electronic Materials and Processing, The Pennsylvania State University, University Park, PA 16802
S. Ashok
Affiliation:
Center for Electronic Materials and Processing, The Pennsylvania State University, University Park, PA 16802
W. Tsai
Affiliation:
Varian Research Center, Palo Alto, CA 94304–1025
M. E. Day
Affiliation:
Varian Research Center, Palo Alto, CA 94304–1025
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Abstract

Electron cyclotron resonance (ECR) argon plasma has been used (to etch the native oxide on Si and thermal SiO2. The Schottky barrier height modification on both n- and p-Si has been studied as a function of substrate bias and etch time. Deep Level Transient Spectroscopy (DLTS) measurements show clear peaks on both p- and n-Si, but wish low levels of trap concentrations (1012-1013cm−3), and decreasing with depth from the surface. The effects of thermal oxide etching on the Si/SiO2 interface have been estimated with MOS capacitors. Negative flat-voltage shift is observed after argon plasma exposure, which removes the thermal oxide at a rate of over 100 Å/min at 50 V bias. C-V measurements show an order of magnitude increase in interface trap density.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 279: Symposium A – Beam-Solid Interactions–Fundamentals and Applications , 1992 , 861
Copyright
Copyright © Materials Research Society 1993

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