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An Analytical Approach for Computing the Energy Structure of InAs Quantum Dots

Published online by Cambridge University Press:  17 March 2011

Valeria G. Stoleru ,
Debdas Pal  and
Elias Towe
Valeria G. Stoleru
Affiliation:
Department of Electrical Engineering, University of Virginia, 351 McCormick Road, Charlottesville, VA 22904-4743, U.S.A.
Debdas Pal
Affiliation:
Department of Electrical Engineering, University of Virginia, 351 McCormick Road, Charlottesville, VA 22904-4743, U.S.A.
Elias Towe
Affiliation:
Department of Electrical Engineering, University of Virginia, 351 McCormick Road, Charlottesville, VA 22904-4743, U.S.A.
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Abstract

The experimental and theoretical results of the electronic structure of self-assembled InAs/GaAs quantum dots are presented. We have performed analytical calculations to obtain the spatial strain distribution in truncated pyramidally-shaped InAs quantum dots grown on (001) GaAs substrates by molecular beam epitaxy. The model reproduces our cross sectional high- resolution transmission electron microscopy observations very well. We further take into account the microscopic effects of the spatial strain distribution on carrier confinement potentials. The effects of piezoelectricity have been neglected in our calculations since they minimally affect the energy levels involved in optical transition. The dots considered here are assumed to be in the strong confinement regime; so Coulomb interaction is neglected. Our calculations of the peak luminescence energies are in good agreement with our experimental results and those of others. The calculated energy separation between the ground and the excited states for electrons and for heavy-holes is in very good agreement with the available photoluminescence, capacitance and far- infrared absorption data.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 642: Symposium J – Semiconductor Quantum Dots II , 2000 , J1.7.1
Copyright
Copyright © Materials Research Society 2001

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References

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