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An Analysis Of Void Nucleation In Passivated Interconnect Lines Due To Vacancy Condensation And Interface Contamination

Published online by Cambridge University Press:  15 February 2011

R. J. Gleixner  and
W. D. Nix
R. J. Gleixner
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305–2205
W. D. Nix
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305–2205
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Abstract

Nucleation of voids due to vacancy condensation in passivated aluminum lines is analyzed within the context of classical nucleation theory. A discussion of sources of hydrostatic tensile stress in such lines provides a reasonable upper limit of 2 GPa. The void nucleation rate is then calculated at various sites within the line. Results suggest that nucleation rates are far too low to account for observed rates of voiding. Void nucleation at a flaw at the line/passivation interface is then considered as an alternative nucleation mechanism. Such flaws may be created by contaminants introduced during fabrication of the line. In this case, nucleation is feasible at greatly reduced stresses, well within the observed values. Furthermore, a simple model of void growth indicates that a fast atomic transport path, such as a grain boundary, must intersect the void for an appreciable growth rate. These results suggest that void nucleation in aluminum interconnect lines occurs at flaws at the sidewall of the line and that stress-induced and electromigration-induced voiding can be controlled by eliminating interfacial contamination.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 428: Symposium L – Materials Reliability in Microelectronics VI , 1996 , 475
Copyright
Copyright © Materials Research Society 1996

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