Hostname: page-component-cd9895bd7-gxg78 Total loading time: 0 Render date: 2024-12-27T02:19:20.411Z Has data issue: false hasContentIssue false
  • English
  • Français

An Analysis by Scanning Acoustic Microscopy of the Mechanical Stability of PSG and Si3N4 Passivation Films

Published online by Cambridge University Press:  22 February 2011

P. Scafidi ,
M. Ignat ,
P. Mortini  and
M. Marty
P. Scafidi
Affiliation:
Laboratoire de Thermodynamique et de Physico-Chimie Métallurgiques, ENSEEG, Institut National Polytechnique de Grenoble, B.P. 75, 38402 Saint-Martin-d'Héres, France
M. Ignat
Affiliation:
Laboratoire de Thermodynamique et de Physico-Chimie Métallurgiques, ENSEEG, Institut National Polytechnique de Grenoble, B.P. 75, 38402 Saint-Martin-d'Héres, France
P. Mortini
Affiliation:
SGS-Thomson Microelectronics, B.P. 217, 38019 Grenoble, France
M. Marty
Affiliation:
SGS-Thomson Microelectronics, B.P. 217, 38019 Grenoble, France
Get access

Abstract

Two types of mechanical tests associated with acoustic microscopy characterizations were performed to investigate the mechanical stability of PSG and Si3N4 passivation films. An in situ tensile test micro-device was installed under a scanning acoustic microscope to study the damage development in the passivation films deposited on A1,1%Si substrates. The analysis of the attenuation of the acoustic signature of the film/substrate systems and the variations of the leaky surface acoustic wave velocity permitted detection of the cracking and decohesion of the passivation films. The four-point bending test was used to submit passivated aluminum multilayers deposited on silicon substrates to cyclic compression. Then subsurface acoustic images revealed decohered zones in the passivation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 338: Symposium – Materials Reliability in Microelectronics IV , 1994 , 115
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Fonseca, R.J.M. Da, Ferdj-Allah, L., Boudour, A., Robert, L., Attal, L., Adv.Mat. 5, 508 (1993).CrossRefGoogle Scholar
2. Sheppard, C.J.R., Wilson, T., Appl. Phys. Lett. 38, 858 (1981).CrossRefGoogle Scholar
3. Brekhovskikh, L.M., Waves In Layered Media, 2nd ed. (Academic Press, New York, 1980).Google Scholar
4. Scafidi, P., Ignat, M., Dupeux, M., in Materials reliability in Microelectronics III, ed. Rodbell, K.P., Ho, P.S., Filter, W.F., Frost, H. (Mat.Res.Soc.Symp.Proc. 309, Pittsburgh, PA, 1993).Google Scholar