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An Alternative Model for the Kinetics of Light-Induced Defects in A-Si:H

Published online by Cambridge University Press:  21 February 2011

Paulo V. Santos ,
W. B. Jackson  and
R. A. Street
Paulo V. Santos
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
W. B. Jackson
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
R. A. Street
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
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Abstract

The kinetics of light-induced defect generation in a-Si:H was investigated over a wide range of illumination intensities and temperatures. The defect density around 1016cm-3 exhibits a power-law time dependence Ns ∼ G2εfε with ε = 0.2 to 0.3, where G is the photo-carrier generation rate. A model for the kinetics of defect generation is proposed based on the existence of an exponential distribution of defect formation energies in the amorphous network, associated with the valence band tail states. The model reproduces the observed time dependence of the defect density with an exponent e determined by the exponential width of the valence band tail. The temperature dependence of the defect generation rate is well-reproduced by the model, which provides a connection between the Stabler-Wronski effect and the weak-bond model.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 219: Symposium A – Amorphous Silicon Technology - 1991 , 1991 , 15
Copyright
Copyright © Materials Research Society 1991

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References

[1] Stabler, D.L. and Wronski, C.R., Appl. Phys. Lett. 31, 292 (1977).Google Scholar
[2] Santos, P.V., Jackson, W.B., and Street, R.A., to appear in the Proc. of the Int. Meeting on Stability of Amorphous Silicon and Solar Cells, Denver, CO, Feb.1991.Google Scholar
[3] Stutzmann, M., Jackson, W.B., and Tsai, C.C., Phys. Rev. B 32, 23 (1985).Google Scholar
[4] Jackson, W.B., Phil. Mag. Lett. 59, 103 (1989).Google Scholar
[5] Bube, R.H. and Redfield, D., J. Appl. Phys. 66, 820 (1988).CrossRefGoogle Scholar
[6] Park, H.R., Liu, J.Z., and Wagner, S., Appl. Phys. Lett. 55, 2658 (1989).Google Scholar
[7] Lee, C., Ohlsen, W.D., and Taylor, P.C., in Proc. of the 18th International Conference on the Physics of Semiconductors, Eds.: Engström, O. ( World Scientific, Singapore, 1986 ), p. 1085.Google Scholar
[8] Street, R.A. and Winer, K., Phys. Rev. B 40, 6236 (1989).Google Scholar
[9] Winer, K., Phys. Rev. B 41, 12150 (1990).Google Scholar
[10] Ashcroft, N. and Mermin, N.D., Solid State Physics (Holt-Rinehardt and Winston, New York, 1976).Google Scholar
[11] Santos, P.V. and Jackson, W.B., to be published.Google Scholar
[12] Jackson, W.B., Phys. Rev. B 41, 1059 (1990).Google Scholar