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Amplification Path Length Dependence Studies of Stimulated Emission from Optically Pumped InGaN/GaN Multiple Quantum Wells

Published online by Cambridge University Press:  15 February 2011

T.J. Schmidt ,
S. Bidnyk ,
Yong-Hoon Cho ,
A.J. Fischer ,
J.J. Song ,
S. Keller ,
U.K. Mishra  and
S.P. DenBaars
T.J. Schmidt
Affiliation:
Center for Laser and Photonics Research and Dept. of Physics Oklahoma State University, Stillwater, OK 74078
S. Bidnyk
Affiliation:
Center for Laser and Photonics Research and Dept. of Physics Oklahoma State University, Stillwater, OK 74078
Yong-Hoon Cho
Affiliation:
Center for Laser and Photonics Research and Dept. of Physics Oklahoma State University, Stillwater, OK 74078
A.J. Fischer
Affiliation:
Center for Laser and Photonics Research and Dept. of Physics Oklahoma State University, Stillwater, OK 74078
J.J. Song
Affiliation:
Center for Laser and Photonics Research and Dept. of Physics Oklahoma State University, Stillwater, OK 74078
S. Keller
Affiliation:
Electrical and Computer Engineering and Materials Depts. University of California, Santa Barbara, CA 93106
U.K. Mishra
Affiliation:
Electrical and Computer Engineering and Materials Depts. University of California, Santa Barbara, CA 93106
S.P. DenBaars
Affiliation:
Electrical and Computer Engineering and Materials Depts. University of California, Santa Barbara, CA 93106
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Abstract

Optically pumped stimulated emission (SE) from InGaN/GaN multiple quantum wells (MQWs) grown by metalorganic chemical vapor deposition has been systematically studied as a function of excitation length (Lexc). Two distinct SE peaks were observed from these structures: one that originates at 425 nm at 10 K (430 nm at 300 K) and another that originates at 434 nm at 10 K (438 nm at 300 K). The SE threshold for the high energy peak was observed to always be lower than that of the low energy peak, but the difference was found to decrease greatly with increasing Lexc. A detailed study of the emission intensity of these two SE peaks as a function of excitation density shows that the two peaks compete for gain in the MQW active region.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 537: Symposium G – GaN and Related Alloys , 1998 , G6.54
Copyright
Copyright © Materials Research Society 1999

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References

1 Nakamura, S., Senoh, M., lwasa, N., Nagahama, S., Yamada, T., and Mukai, T., Jpn. J. Appl. Phys. 34, L1332 (1995).Google Scholar
2 Nakamura, S., Senoh, M., Nagahama, S., Iwasa, N., Yamada, T., Matsushita, T., Sugimoto, Y., and Kiyoku, H., Appl. Phys. Lett. 69, 4056 (1996).Google Scholar
3 Lim, B.W., Chen, Q.C., Yang, J.Y., and Khan, M.A., Appl. Phys. Lett. 68, 3761 (1996).Google Scholar
4 Wu, Y.F., Keller, B.P., Keller, S., Kapolnek, D., Kozodoy, P., DenBaars, S.P., and Mishra, U.K., Appl. Phys. Lett. 69, 1438 (1996).Google Scholar
5 Yang, X.H., Schmidt, T.J., Shan, W., Song, J.J., and Goldenberg, B., Appl. Phys. Lett. 66, 1 (1995). S. Bidnyk, T.J. Schmidt, Y.H. Cho, G.H. Gainer, J.J. Song, S. Keller, U.K. Mishra, and S.P. DenBaars, Appl. Phys. Lett. 72, 1623 (1998).Google Scholar
6 Nakamura, S., Senoh, M., Nagahama, S.I., Iwasa, N., Yamada, T., Matsushita, T., Sugimoto, Y., and Kiyoku, H., Appl. Phys. Lett. 70, 1417 (1997).Google Scholar
7 Nakamura, S., Senoh, M., Nagahama, S.I., Iwasa, N., Yamada, T., Matsushita, T., Sugimoto, Y., and Kiyoku, H., Appl. Phys. Lett. 70, 2753 (1997).Google Scholar
8 Chichibu, S., Azuhata, T., Sota, T., and Nakamura, S., Appl. Phys. Lett. 69, 4188 (1996).Google Scholar
9 Narukawa, Y., Kawakami, Y., Funato, M., Fujita, S., Fugita, S., and Nakamura, S., Appl. Phys. Lett. 70, 981 (1997).Google Scholar
10 Satake, A., Masumoto, Y., Miyajima, T., Asatsuma, T., Nakamura, F., and Ikeda, M., Phys. Rev. B 57, R2041 (1998).Google Scholar
11 Deguchi, T., Azuhata, T., Sota, T., Chichibu, S., Arita, M., Nakanishi, H., and Nakamura, S., Semicond. Sci. Technol. 13, 97 (1998).Google Scholar
12 Jeon, E.S., Kozlov, V., Song, Y.K., Vertikov, A, Kuball, M., Nurmikko, A.V., Liu, H., Chen, C., Kern, R.S., Kuo, C.P., and Craford, M.G., Appl. Phys. Lett. 69, 4194 (1996).Google Scholar
13 Narakawa, Y., Kuwakima, Y., Fujita, S., Fujita, S., and Nakamura, S., Phys. Rev. B 55, R1938 (1997).Google Scholar
14 Im, J.S., Heppel, S., Kollmer, H., Sohmer, A., Off, J., Scholz, F., and Hangleiter, A., Proc. 2nd Int. Conf. Nitride Semicond., Tokushima, Japan, 228 (1997).Google Scholar
15 Keller, S., Abare, A.C., Minsky, M.S., Wu, X.H., Mack, M.P., Speck, J.S., Hu, E., Coldren, L.A., Mishra, U.K., and DenBaars, S.P., Materials Science Forum 264–268, 1157 (1998). B.P. Keller, S. Keller, D. Kapolnek, W.N. Jiang, X.-F. Wu, H. Masui, X.H. Wu, B. Heying, J.S. Speck, U.K. Mishra, and S.P. DenBaars, J. Electron. Mater. 24, 1707 (1995).Google Scholar
16 Schmidt, T.J., Cho, Y.H., Gainer, G.H., Song, J.J., Keller, S., Mishra, U.K., and DenBaars, S.P., Appl. Phys. Lett. 73, 560 (1998).Google Scholar
17 Schmidt, T.J., Cho, Y.H., Gainer, G.H., Song, J.J., Keller, S., Mishra, U.K., and DenBaars, S.P., Appl. Phys. Lett. 73, 1892 (1998).Google Scholar
18 Kuball, M., Jeon, E.S., Song, Y.K., Nurmikko, A.V., Kozodoy, P., Abare, A., Keller, S., Coldren, L.A., Mishra, U.K., DenBaars, S.P., and Steigerwald, D.A., Appl. Phys. Lett. 70, 2580 (1997).Google Scholar
19 Mohs, G., Aoki, T., Nagai, M., Shimano, R., Kuwata-Gonokami, M., and Nakamura, S., Proc. 2nd Int. Conf. Nitride Semicond., Tokushima, Japan, 234 (1997).Google Scholar
20 Nakamura, S., MRS Internet J. Nitride Semicond. Res. 2, Art. 5 (1997).Google Scholar
21 Mack, M.P., Abare, A., Aizcorbe, M., Kozodoy, P., Keller, S., Mishra, U.K., Coldren, L., and DenBaars, S.P., MRS Internet J. Nitride Semicond. Res. 2, Art. 41 (1997).Google Scholar
22 Shaklee, K.L. and Leheny, R.F., Appl. Phys. Lett. 18, 475 (1971).Google Scholar