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Amphoteric Behaviour of Ge in InP: A RBS/Channeling and Differential Hall/Resistivity Study

Published online by Cambridge University Press:  26 February 2011

P. Kringhøj
P. Kringhøj*
Affiliation:
Institute of Physics, University of Aarhus, DK-8000 Aarhus, Denmark
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Abstract

The lattice location of ion implanted Ga, Ge, and Se in InP has been determined with a combined RBS/channeling-PIXE technique and correlated to the carrier concentration and mobility profiles obtained with differential Hall/resistivity measurements.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 240: Symposium E – Advanced III-V Compound Semiconductor Growth, Processing and Devices , 1991 , 841
Copyright
Copyright © Materials Research Society 1992

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References

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