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Amorphous-Microcrystalline Silicon Films Obtained Using Hydrogen Dilution in a DC Saddle-Field Glow-Discharge

Published online by Cambridge University Press:  11 February 2011

T. Allen ,
I. Milostnaya ,
D. Yeghikyan ,
F. Gaspari ,
N.P. Kherani ,
T. Kosteski  and
S. Zukotynski
T. Allen
Affiliation:
Department of Physics, Geology and Astronomy, University of Tennessee at Chattanooga, Chattanooga, TN 37403, U.S.A.
I. Milostnaya
Affiliation:
Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario, CANADA, M5S 1A4
D. Yeghikyan
Affiliation:
Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario, CANADA, M5S 1A4
F. Gaspari
Affiliation:
Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario, CANADA, M5S 1A4
N.P. Kherani
Affiliation:
Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario, CANADA, M5S 1A4
T. Kosteski
Affiliation:
Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario, CANADA, M5S 1A4
S. Zukotynski
Affiliation:
Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario, CANADA, M5S 1A4
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Abstract

Amorphous-microcrystalline Si has been grown with hydrogen dilution using the DC saddle-field glow-discharge deposition technique. The five-electrode saddle-field system allows for independent control of the discharge parameters and of the substrate bias. The film structure was studied using Raman spectroscopy and SEM. We find that the structure of the films depends mainly on hydrogen dilution, substrate bias, electrical conductivity of the substrate, and chamber pressure. The deposition conditions, which promote growth of microcrystals, have been identified. It was found that the local electric field at the substrate surface plays a key role in obtaining microcrystallinity.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 744: Symposium M – Progress in Semiconductors II–Electronic and Optoelectronic Applications , 2002 , M5.22
Copyright
Copyright © Materials Research Society 2003

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References

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