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Amorphous Thin Film Ruthenium Oxide as an Electrode Material for Electrochemical Capacitors

Published online by Cambridge University Press:  15 February 2011

T.R. Jow  and
J.P. Zheng
T.R. Jow
Affiliation:
Army Research Laboratory, Electronics and Power Sources Directorate, Fort Monmouth, NJ 07703-5601
J.P. Zheng
Affiliation:
Army Research Laboratory, Electronics and Power Sources Directorate, Fort Monmouth, NJ 07703-5601
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Abstract

Ruthenium oxide thin films of an amorphous phase were successfully prepared on a titanium (Ti) substrate at temperatures below 160 °C. The sol-gel process using metal alkoxide precursor in nonaqueous solvents was used to prepare these films. The preliminary results showed that a specific capacitance of 430 F/g can be achieved for amorphous ruthenium oxide electrode in sulfuric acid. Films prepared by this method are compared with the films prepared by the thermal decomposition of the aqueous ruthenium chloride solution at temperatures above 300 °C. The specific capacitance, the crystalline structure, and the surface morphology of these films as a function of the preparation temperature were also discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 393: Symposium W – Materials for Electrochemical Energy Storage and Conversion , 1995 , 433
Copyright
Copyright © Materials Research Society 1995

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References

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