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Amorphous Silicon Image Sensor Arrays

Published online by Cambridge University Press:  21 February 2011

M J Powell ,
I D French ,
J R Hughes ,
N C Bird ,
O S Davies ,
C Glasse  and
J E Curran
M J Powell
Affiliation:
Philips Research Laboratories, Redhill, Surrey, RH1 5HA, UK
I D French
Affiliation:
Philips Research Laboratories, Redhill, Surrey, RH1 5HA, UK
J R Hughes
Affiliation:
Philips Research Laboratories, Redhill, Surrey, RH1 5HA, UK
N C Bird
Affiliation:
Philips Research Laboratories, Redhill, Surrey, RH1 5HA, UK
O S Davies
Affiliation:
Philips Research Laboratories, Redhill, Surrey, RH1 5HA, UK
C Glasse
Affiliation:
Philips Research Laboratories, Redhill, Surrey, RH1 5HA, UK
J E Curran
Affiliation:
Philips Research Laboratories, Redhill, Surrey, RH1 5HA, UK
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Abstract

We have developed a technology for 2D matrix-addressed image sensors using amorphous silicon photodiodes and thin film transistors. We have built a small prototype, having 192×192 pixels with a 20μm pixel pitch, and assessed its performance. The nip photodiodes can have dark current densities of less than 1011 A.cm-2 (up to 5V reverse bias) and peak quantum efficiencies of 88% (at 580nm). We operated the sensor in real time mode at high speed (50 Hz frame rate and 64μS line time). The image sensor has a low noise performance giving a dynamic range in excess of 104. The maximum crosstalk is about 2%, which allows at least 50 grey levels. The bottom contact of the photodiode acts as a light shield from light through the substrate, which enables the sensor to be operated as an intimate contact image sensor to image a document placed directly on top of the array. In this mode, the CTF was 75% at 2 lp.mm1. Good quality images are demonstrated in both front projection and intimate contact imaging modes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 1127
Copyright
Copyright © Materials Research Society 1992

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References

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