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Amorphous Domains in GaN Layers Grown on 6H-SiC by MBE

Published online by Cambridge University Press:  10 February 2011

P. Vermaut ,
V. Potin ,
P. Ruterana ,
A. Hairme ,
G. Nouet ,
A. Salvador  and
H. Morkoç
P. Vermaut
Affiliation:
Laboratoire d'Etudes et de Recherches sur les Matériaux, upresa-cnrs 6004 Institut des Sciences de la Matière et du Rayonnement 6 Bd du Maréchal Juin 14050 Caen Cedex France
V. Potin
Affiliation:
Laboratoire d'Etudes et de Recherches sur les Matériaux, upresa-cnrs 6004 Institut des Sciences de la Matière et du Rayonnement 6 Bd du Maréchal Juin 14050 Caen Cedex France
P. Ruterana
Affiliation:
Laboratoire d'Etudes et de Recherches sur les Matériaux, upresa-cnrs 6004 Institut des Sciences de la Matière et du Rayonnement 6 Bd du Maréchal Juin 14050 Caen Cedex France
A. Hairme
Affiliation:
Laboratoire d'Etudes et de Recherches sur les Matériaux, upresa-cnrs 6004 Institut des Sciences de la Matière et du Rayonnement 6 Bd du Maréchal Juin 14050 Caen Cedex France
G. Nouet
Affiliation:
Laboratoire d'Etudes et de Recherches sur les Matériaux, upresa-cnrs 6004 Institut des Sciences de la Matière et du Rayonnement 6 Bd du Maréchal Juin 14050 Caen Cedex France
A. Salvador
Affiliation:
University of Illinois-Urbana, Coordinated Science Laboratory, Urbana, Illinois, IL 61801 [email protected]
H. Morkoç
Affiliation:
University of Illinois-Urbana, Coordinated Science Laboratory, Urbana, Illinois, IL 61801 [email protected]
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Abstract

Using N-rich growth conditions, amorphous domains were formed in the initial stage of a cyclotron assisted MBE of GaN grown over 6H-SiC (0001) without any buffer layer. These domains are facetted along {1010} prismatic planes. Their density is about 1010cm-2 and they are mainly located in a 50 nm layer close to the substrate surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 429
Copyright
Copyright © Materials Research Society 1998

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References

[1] Nakamura, S., Senoh, M., Nagahama, S., Iwasa, N., Yamada, T., Matsushita, T., Kiyoku, K. and Sugimoto, Y., Jpn. J. Appl. Phys., 35, L 74. (1996).10.1143/JJAP.35.L74Google Scholar
[2] Morkoç, H., Strite, S., Gao, G. B., Lin, M. E., Sverdlov, B. and Burns, M., J. Appl. Phys., 76, 1363. (1994).10.1063/1.358463Google Scholar
[3] Ponce, F.A., Major, J.S. Jr., Piano, W.E. and Welch, D.F., Appl. Phys. Lett., 65, 2302 (1994).10.1063/1.112724Google Scholar
[4] Vermaut, P., Ruterana, P., Nouet, G. and Morkoç, H., Phil. Mag. A, 75, 239 (1997).10.1080/01418619708210293Google Scholar
[5] Vermaut, P., Ruterana, P. and Nouet, G., Phil. Mag. A, 76, 1215 (1997).10.1080/01418619708214224Google Scholar
[6] Potin, V., Ruterana, P. and Nouet, G., J. Appl. Phys. 82, 2176 (1997).10.1063/1.366094Google Scholar
[7] Rouvière, J.L., Arlery, M., Bourret, A., Niebuhr, R. and Bachem, K., Inst. Phys. Conf. Ser. 146, 285 (1995).Google Scholar
[8] Qian, W., Skowronski, M., Doverspike, K., Rowland, L.B., Gaskill, D.K., J. Cryst. Growth 151, 396 (1995).10.1016/0022-0248(95)00082-8Google Scholar
[9] Vennegues, P., Beaumont, B. and Gibart, P., Appl. Phys. Lett., 70, 2434 (1997).10.1063/1.118894Google Scholar
[10] Crawford, D.E., Held, R., Johnston, A.M., Dabiran, A.M. and Cohen, P.I., International Conference on Silicon Carbide, III-nitrides and Related Materials, August 31 – September 5, 1997, Stockholm.Google Scholar
[11] Järrendahl, K., Smith, S.A., Kean, R.S. and Davis, R.F., International Conference on Silicon Carbide, III-nitrides and Related Materials, August 31 - September 5, 1997, Stockholm.Google Scholar
[12] Lin, M.E., Strite, S., Agarwall, A., Salvador, A., Zhou, G.L., Teragushi, N., Rockett, A. and Morkog, H., Appl. Phys.Lett., 62, 702 (1993).10.1063/1.108845Google Scholar
[13] Wurzinger, P., Pongratz, P. and Skalicky, P., Phil. Mag. A, 61, 35 (1990).10.1080/01418619008235556Google Scholar
[14] Frank, F.C., Acta Cryst., 4, 497 (1991).10.1107/S0365110X51001690Google Scholar
[15] d'Aragona, F. Secco and Delavignette, P., J. Phys., 27C3, 121 (1966).Google Scholar
[16] Liliental-Weber, Z., Chen, Y., Ruvimov, S. and Washburn, J., Phys. Rev. Lett., 79, 2835 (1997).10.1103/PhysRevLett.79.2835Google Scholar