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Amorphous and Disordered Materials - the Basis of New Industries

Published online by Cambridge University Press:  10 February 2011

S. R. Ovshinsky
S. R. Ovshinsky*
Affiliation:
Energy Conversion Devices, Inc., Troy, Michigan 48084
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Abstract

As in the past, materials will shape the new century. Dramatic changes are taking place in the fields of energy and information based on new synthetic materials. In energy, the generation of electricity by amorphous silicon alloy thin film photovoltaics; the storage of electricity in nickel metal hydride batteries which are the batteries of choice for electric and hybrid vehicles. In the information field, phase change memories based on a reversible amorphous to crystalline transformation are widely used as optical memories and are the choice for the new rewritable CDs and DVDs. The scientific and technological bases for these three fields that have become the enabling technologies are amorphous and disordered materials. We will discuss how disordered, multielemental, multiphase materials can throw new light upon metallic conductivity in both bulk and thin film materials. We will demonstrate new types of amorphous devices that have the ability to learn and adapt, making possible new concepts for computers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 554: Symposium MM – Bulk Metallic Glasses , 1998 , 399
Copyright
Copyright © Materials Research Society 1999

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References

1. The Economist, p, 98, October 2, 1993.Google Scholar
2. U.S. Department of Energy announcement, January 18, 1994.Google Scholar
3. Hofer, U., Science 279, 190 (Jan. 9, 1998).Google Scholar
4. Ovshinsky, S.R., Phys. Rev. Lett. 21, 1450 (1968).Google Scholar
5. Cohen, M.H., Fritzsche, H. and Ovshinsky, S.R., Phys. Rev. Lett. 22, 1065 (1969).Google Scholar
6. Ovshinsky, S.R., Rev. Roum. Phys. 26, 893 (1981).Google Scholar
7. Ovshinsky, S.R. and Adler, D., Contemp. Phys. 19, 109 (1978).Google Scholar
8. Ovshinsky, S.R., in Physics of Disordered Materials, edited by Adler, D., Fritzsche, H. and Ovshinsky, S.R., (Inst. for Amorphous Studies Series, Plenum Press, New York, 1985) p. 37.Google Scholar
9. Ovshinsky, S.R., J. Non-Cryst. Solids 32, 17 (1979).Google Scholar
10. Ovshinsky, S.R., in Insulating and Semiconducting Glasses, edited by Boolchand, P. (World Scientific Press, Singapore, 1999).Google Scholar
11. For further References, see Disordered Materials: Science and Technology, Selected papers by Stanford R. Ovshinsky, edited by Adler, D., Schwartz, B.B. and Silver, M. (Institute for Amorphous Studies Series, Plenum Press, New York, 1991).Google Scholar
12. Ovshinsky, S.R., in Proc. of the Seventh International Conference on Amorphous and Liquid Semiconductors, Edinburgh, Scotland, 27 June-I July, 1977, p. 519.Google Scholar
13. Ovshinsky, S.R., J. of Non-Cryst. Solids 42, 335 (1980).Google Scholar
14. Ovshinsky, S.R., Presented at 1978 Gordon Research Conference on Catalysis (unpublished).Google Scholar
15. Ovshinsky, S.R., presented in May 1980 at Lake Angelus, MI (unpublished).Google Scholar
16. Sapru, K., Reichman, B., Reger, A. and Ovshinsky, S.R., U.S. Pat. No. 4 633 597 (18 Nov. 1986).Google Scholar
17. Ovshinsky, S.R., Fetcenko, M.A. and Ross, J., Science 260, 176 (9 April 1993).Google Scholar
18. Ovshinsky, S.R., in Proc. of the Sixth International Conference on Amorphous and Liquid Semiconductors, Leningrad, USSR, 18–24 November 1975, p. 426.Google Scholar
19. Ovshinsky, S.R., in Proc. of the International Topical Conference on Structure and Excitation ofAmorphous Solids, Williamsburg, Virginia, 24–27 March 1976, p. 31.Google Scholar
20. Ovshinsky, S.R., New Scientist 80 (1131), 674–677 (1978).Google Scholar
21. Ovshinsky, S.R., Solar Energy Mats. and Solar Cells 32, 443–449 (1994).Google Scholar
22. Ovshinsky, S.R., in Proc. of the International Ion Engineering Congress, ISIA T '83 & IPAT '83, Kyoto, 12–16 September 1983, p. 817.Google Scholar
23. Ovshinsky, S.R. and Flasck, J., U.S. Patent No. 4 770 940 ( 13 September 1988).Google Scholar
24. Ovshinsky, S.R. and Young, R.T., in Proc. of the SPIE Symposium on Modeling of Optical Thin Films 11, 1324, San Diego, California, 12–13 July 1990, p. 32.Google Scholar
25. Guha, S., Yang, J., Banerjee, A., Glatfelter, T., Vendura, G.J., Jr., Garcia, A. and Kruer, M., presented at the 2nd World Conference and Exhibition on Photovoltaic Solar Energy Conversion, Vienna, Austria, 6–10 July 1998.Google Scholar
26. Glorioso, J., Energy Management, June/July 1980, p. 45. Shown in 1980 by Stan and Iris Ovshinsky to Domtar, a Canadian roofing company and to Allside, an aluminum siding company of Akron, Ohio.Google Scholar
27. Yang, J., Banerjee, A., Lord, K. and Guha, S., presented at the 2nd World Conference and Exhibition on Photovoltaic Solar Energy Conversion, Vienna, Austria, 6–10 July 1998.Google Scholar
28. Ovshinsky, S.R., presentation at the British House of Commons, July 1977.Google Scholar
29. Guha, S., Yang, J., Banerjee, A. and Sugiyama, S., presented at the 1998 MRS Spring Meeting, San Francisco, CA, 1998 (invited).Google Scholar
30. Tsu, D.V., Chao, B.S., Ovshinsky, S.R., Guha, S. and Yang, J., App. Phys. Lett. 71, 1317 (1997).Google Scholar
31. Tsu, R., Izu, M., Cannella, V., Ovshinsky, S.R., Jan, G-J. and Pollak, F.H., J. Phys. Soc. Japan Suppl. A49, 1249 (1980).Google Scholar
32. Tsu, R., Izu, M., Cannella, V., Ovshinsky, S.R. and Pollak, F.H., Solid State Comm. 36, 817 (1981).Google Scholar
33. Tsu, R., Chao, S.S., Ovshinsky, S.R., Jan, G-J. and Pollak, F.H., J. de Physique 42, 269 (1981).Google Scholar
34. Tsu, R., Gonzalez-Hernandez, J., Doehler, J. and Ovshinsky, S.R., Solid State Comm. 46. 79 (1983).Google Scholar
35. Fetcenko, M.A., Hudgens, S.J. and Ovshinsky, S.R., Daido Journal (Denki-Seiko) 66 (2) 123–136 (April 1995). (Special Issue Electronics & Functional Materials.)Google Scholar
36. See for ex. 1959 Control Engineering on the Ovitron.Google Scholar
37. Kostic, P., Okada, Y., Collins, N.C., Schlesinger, Z., Reiner, J.W., Klein, L., Kapitulnik, A., Geballe, T. H., and Beasley, M. R., Phys. Rev. Lett. 81, 2498, (1998).Google Scholar
38. Ovshinsky, S.R. and Stempel, R.C., invited presentation at the 13th Electric Vehicle Symposium (EVS-13), Osaka, Japan, 13–16 October 1996.Google Scholar
39. Stempel, R.C., Ovshinsky, S.R., Gifford, P.R. and Corrigan, D.A., IEEE Spectrum, November 1998, p. 29.Google Scholar
40. IEEE Spectrum, December 1997, p. 68.Google Scholar
41. 10th Anniversary American Tour de Sol Competition, run in New York City by Northeast Sustainable Energy Association (NESEA), (1998).Google Scholar
42. Kastner, M., Phys. Rev. Lett. 28, 355 (1972).Google Scholar
43. Ovshinsky, S.R. and Sapru, K., in Proc. of the Fifth International Amorphous and Liquid Semiconductors, Garmisch-Partenkirchen, Germany (1974), p. 447.Google Scholar
44. Ovshinsky, S.R., Phys. Rev. Lett. 36 (24), 1469–1472 (1976).Google Scholar
45. Ovshinsky, S.R. and Fritzsche, H., IEEE Trans. Elect. Dev., ED–20 (2) 91–105 (1973).Google Scholar
46. Kastner, M., Adler, D. and Fritzsche, H., Phys. Rev. Lett. 37, 1504 (1976).Google Scholar
47. For history and early References, see Ovshinsky, S. R., “Historique du Changement de Phase” in Memoires, Optiques et Systemes, No. 127, Sept. 1994, p. 65; in the Proc. of the Fifth Annual National Conference on Industrial Research, Chicago, Illinois, 18–19 September 1969; Journal de Physique 42, supplement au no. 10 October 1981.Google Scholar
48. Ovshinsky, S. R., presented at the 1997 International Semiconductor Conference, Sinaia, Romania, 1997.Google Scholar
49. Ovshinsky, S. R., presented at High Density Phase Change Optical Memories in Multi-Media Era, 9th Conference for Phase Change Media, Shizuoka, Japan, 1997.Google Scholar
50. Ovshinsky, S.R. and Ovshinsky, I.M., Mats. Res. Bull. 5, 681 (1970).Google Scholar