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Ambipolar injection in a submicron channel light-emitting tetracene transistor with distinct source and drain contacts

Published online by Cambridge University Press:  01 February 2011

J. Reynaert
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium also with ESAT, Katholieke Universiteit Leuven, Leuven, Belgium
D. Cheyns
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium also with ESAT, Katholieke Universiteit Leuven, Leuven, Belgium
D. Janssen
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
V. I. Arkhipov
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
G. Borghs
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
J. Genoe
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
P. Heremans
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
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Abstract

Over the last decade, organic semiconductor thin film transistors have been the focus of many research groups because of their potential application in low-cost integrated circuits. Recently, an organic light-emitting field-effect transistor (OLEFET) was reported. In an OLEFET structure, optimal injection of both holes and electrons into the light-emitting layer are required for maximum quantum efficiency, whereas the gate serves as a controlling electrode. In this work, we achieved an OLFET structure with interdigitated hole-injecting Au and electron-injecting Ca contacts within a submicrometer channel length. Both contacts are bottom contacts to the upper-lying tetracene organic semiconductor. The study of IV-characteristics and light emission from these devices shined light on the underlying physics of the OLEFETs.

Type
Research Article
Copyright
Copyright © Materials Research Society 2005

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References

REFERENCES

1. Hepp, A., Heil, H., Weise, W., Ahles, M., Schmechel, R., and von Seggern, H., Physical Review Letters, 2003. 91(15): p. 157406.Google Scholar
2. Rost, C., Gundlach, D.J., Karg, S., and Riess, W., Journal of Applied Physics, 2004. 95(10): p. 57825787.Google Scholar
3. Rost, C., Karg, S., Riess, W., Loi, M.A., Murgia, M., and Muccini, M., Applied Physics Letters, 2004. 85(9): p. 16131615.Google Scholar
4. Ahles, M., Hepp, A., Schmechel, R., and von Seggern, H., Applied Physics Letters, 2004. 84(3): p. 428430.Google Scholar
5. Sakanoue, T., Fujiwara, E., Yamada, R., and Tada, H., Applied Physics Letters, 2004. 84(16): p. 30373039.Google Scholar
6. Gundlach, D.J., Nichols, J.A., Zhou, L., and Jackson, T.N., Applied Physics Letters, 2002. 80(16): p. 29252927.Google Scholar
7. Geens, W., Study of the potential energy conversion efficiency of organic solar cells based on donor/acceptor heterojunctions. 2002, University of Antwerp, Belgium.Google Scholar
8. Chabinyc, M.L., Lu, J.P., Street, R.A., Wu, Y.L., Liu, P., and Ong, B.S., Journal of Applied Physics, 2004. 96(4): p. 20632070.Google Scholar
9. Austin, M.D. and Chou, S.Y., Applied Physics Letters, 2002. 81(23): p. 44314433.Google Scholar
10. Sze, S.M., Physics of Semiconductor Devices. 2nd ed. 1981, New York: Wiley.Google Scholar
11. Reynaert, J., Arkhipov, V.I., Borghs, G., and Heremans, P., Applied Physics Letters, 2004. 85(4): p. 603605.Google Scholar