Crossref Citations
This article has been cited by the following publications. This list is generated based on data provided by
Crossref.
Dovidenko, K.
Oktyabrsky, S.
Narayan, J.
Joshkin, V.
and
Razeghi, M.
1997.
Comparative Study of Typical Defects in III-Nitride Thin Films and Their Alloys.
MRS Proceedings,
Vol. 482,
Issue. ,
Ambacher, O.
Arzberger, M.
Brunner, D.
Angerer, H.
Freudenberg, F.
Esser, N.
Wethkamp, T.
Wilmers, K.
Richter, W.
and
Stutzmann, M.
1997.
AlGaN-Based Bragg Reflectors.
MRS Internet Journal of Nitride Semiconductor Research,
Vol. 2,
Issue. ,
Ambacher, O
1998.
Growth and applications of Group III-nitrides.
Journal of Physics D: Applied Physics,
Vol. 31,
Issue. 20,
p.
2653.
Polyakov, A.Y.
Smirnov, N.B.
Govorkov, A.V.
Mil'vidskii, M.G.
Redwing, J.M.
Shin, M.
Skowronski, M.
Greve, D.W.
and
Wilson, R.G.
1998.
Properties of Si donors and persistent photoconductivity in AlGaN.
Solid-State Electronics,
Vol. 42,
Issue. 4,
p.
627.
Kung, P.
Saxler, A.
Walker, D.
Rybaltowski, A.
Zhang, Xiaolong
Diaz, J.
and
Razeghi, M.
1998.
GaInN/GaN Multi-Quantum Well Laser Diodes Grown by Low-Pressure Metalorganic Chemical Vapor Deposition.
MRS Internet Journal of Nitride Semiconductor Research,
Vol. 3,
Issue. ,
Katsuragawa, Maki
Sota, Shigetoshi
Komori, Miho
Anbe, Chitoshi
Takeuchi, Tetsuya
Sakai, Hiromitsu
Amano, Hiroshi
and
Akasaki, Isamu
1998.
Thermal ionization energy of Si and Mg in AlGaN.
Journal of Crystal Growth,
Vol. 189-190,
Issue. ,
p.
528.
RAZEGHI, MANIJEH
1998.
GaN-BASED LASER DIODES.
International Journal of High Speed Electronics and Systems,
Vol. 09,
Issue. 04,
p.
1007.
Hanser, Andrew D
Nam, Ok-Hyun
Bremser, Michael D
Thomson, Darren B
Gehrke, Thomas
Zheleva, Tsvetanka S
and
Davis, Robert F
1999.
Growth, doping and characterization of epitaxial thin films and patterned structures of AlN, GaN, and AlxGa1−xN.
Diamond and Related Materials,
Vol. 8,
Issue. 2-5,
p.
288.
Razeghi, M.
2000.
Optoelectronic devices based on III-V compound semiconductors which have made a major scientific and technological impact in the past 20 years.
IEEE Journal of Selected Topics in Quantum Electronics,
Vol. 6,
Issue. 6,
p.
1344.
Razeghi, M.
2017.
A lifetime of contributions to the world of semiconductors using the Czochralski invention.
Vacuum,
Vol. 146,
Issue. ,
p.
308.