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Aluminum Nitride Thin Films Grown by Plasma-Assisted Pulsed Laser Deposition on Si Substrates

Published online by Cambridge University Press:  10 February 2011

M. Okamoto ,
T. Ogawa ,
Y. Mori  and
T. Sasaki
M. Okamoto
Affiliation:
Department of Electrical Engineering, Osaka University, 2–1 Yamada-Oka, Suita, Osaka 565, Japan
T. Ogawa
Affiliation:
Department of Electrical Engineering, Osaka University, 2–1 Yamada-Oka, Suita, Osaka 565, Japan
Y. Mori
Affiliation:
Department of Electrical Engineering, Osaka University, 2–1 Yamada-Oka, Suita, Osaka 565, Japan
T. Sasaki
Affiliation:
Department of Electrical Engineering, Osaka University, 2–1 Yamada-Oka, Suita, Osaka 565, Japan
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Abstract

The smooth and highly oriented AlN films were obtained using pulsed laser deposition from sintered AlN target in a nitrogen ambient. The XRD investigation revealed that highly oriented AlN thin films along the c-axis (AlN (0002)) normal to the substrate were obtained both on Si(111) and on Si(100) substrates. The (0002) x-ray peak width became narrower with increasing substrate temperature. The CL investigation showed that AlN films at high laser energy density (Ed) indicated CL peak at shorter wavelength (306nm) than that at low Ed (394nm). N/Al atomic ratio in AlN films grown at high Ed also increased as comparison with the films grown at low Ed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 468: Symposium D – Gallium Nitride and Related Materials II , 1997 , 87
Copyright
Copyright © Materials Research Society 1997

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References

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