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All-organic field effect transistors

Published online by Cambridge University Press:  15 February 2011

R. Parashkov ,
E. Becker ,
G. Ginev ,
D. Schneider ,
D. Metzdorf ,
T. Dobbertin ,
H-H. Johannes  and
W. Kowalsky
R. Parashkov
Affiliation:
Institut für Hochfrequenztechnik, Technische Universität Braunschweig, PO Box 33 29, D-38092 Braunschweig, Germanye-mail:[email protected].
E. Becker
Affiliation:
Institut für Hochfrequenztechnik, Technische Universität Braunschweig, PO Box 33 29, D-38092 Braunschweig, Germanye-mail:[email protected].
G. Ginev
Affiliation:
Institut für Hochfrequenztechnik, Technische Universität Braunschweig, PO Box 33 29, D-38092 Braunschweig, Germanye-mail:[email protected].
D. Schneider
Affiliation:
Institut für Hochfrequenztechnik, Technische Universität Braunschweig, PO Box 33 29, D-38092 Braunschweig, Germanye-mail:[email protected].
D. Metzdorf
Affiliation:
Institut für Hochfrequenztechnik, Technische Universität Braunschweig, PO Box 33 29, D-38092 Braunschweig, Germanye-mail:[email protected].
T. Dobbertin
Affiliation:
Institut für Hochfrequenztechnik, Technische Universität Braunschweig, PO Box 33 29, D-38092 Braunschweig, Germanye-mail:[email protected].
H-H. Johannes
Affiliation:
Institut für Hochfrequenztechnik, Technische Universität Braunschweig, PO Box 33 29, D-38092 Braunschweig, Germanye-mail:[email protected].
W. Kowalsky
Affiliation:
Institut für Hochfrequenztechnik, Technische Universität Braunschweig, PO Box 33 29, D-38092 Braunschweig, Germanye-mail:[email protected].
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Abstract

In this work we present fully patterned organic transistors based on selective electropolymerization of conducting polymers that enables simple fabrication of micron scale features. It involves fabrication of pentacene field effect transistors in which the conducting, insulating parts as well as the substrate are all made of polymers. We have fabricated drain and source electrodes by electropolymerization of 3,4- ethylenedioxythiophene and gate by spin coating of commercially available poly( 3,4- ethylenedioxythiophene) (PEDOT:PSS) aqueous dispersion, polyvinylalcohol for the gate dielectric layer, and pentacene for the organic active layer. We have built a top-gate structure with gate dielectric layer and gate placed on the top of the pentacene layer, and in a such way obtained protection of the active layer could permit enhancement of the operating time of devices. Carrier mobility as large as 0,01 cm2/V s was measured. Functional all- organic transistors have been realised using a simple and potentially inexpensive technology.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 769: Symposium H – Flexible Electronics - Materials and Device Technology , 2003 , H3.2
Copyright
Copyright © Materials Research Society 2003

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