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Alignment of InAs Quantum Dots on GaAs Using the Manipulation of Strain Fields

Published online by Cambridge University Press:  10 February 2011

Kwang Moo Kim ,
Young Ju Park ,
Young Min Park ,
Jong Bum Nah ,
Chan Kyeong Hyon ,
Eun Kyu Kim  and
Jung Ho Park
Kwang Moo Kim
Affiliation:
Semiconductor Materials Laboratory, Korea Institute of Science and Technology, P.O.Box 131, Cheongryang, Seoul, Korea
Young Ju Park
Affiliation:
Optoelectronics Laboratory, School of Electrical Engineering, Korea University, Anamdong, Sungbukku, Seoul 136-701, Korea
Young Min Park
Affiliation:
Optoelectronics Laboratory, School of Electrical Engineering, Korea University, Anamdong, Sungbukku, Seoul 136-701, Korea
Jong Bum Nah
Affiliation:
Optoelectronics Laboratory, School of Electrical Engineering, Korea University, Anamdong, Sungbukku, Seoul 136-701, Korea
Chan Kyeong Hyon
Affiliation:
Optoelectronics Laboratory, School of Electrical Engineering, Korea University, Anamdong, Sungbukku, Seoul 136-701, Korea
Eun Kyu Kim
Affiliation:
Optoelectronics Laboratory, School of Electrical Engineering, Korea University, Anamdong, Sungbukku, Seoul 136-701, Korea
Jung Ho Park
Affiliation:
Semiconductor Materials Laboratory, Korea Institute of Science and Technology, P.O.Box 131, Cheongryang, Seoul, Korea
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Abstract

We fabricated InAs self-assembled quantum dots (QDs) on strained layer using molecular beam epitaxy. The strained layer consisted of InAs/GaAs superlattice(SL) and GaAs barrier layer on (001) GaAs substrate. Through controlling thickness of the strained layer, we formed two-dimensional alignments of QDs on misfit dislocation arrays along <110> directions made by strained layer. The increase of the strained layer thickness resulted in a stronger alignment of QDs, which were observed by atomic force microscopy studies. The aligned QDs were confirmed to confine carriers well and have different size distributions by photoluminescence measurement.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 618: Symposium K – Morphological & Compositional Evolution of Heteroepitaxial… , 2000 , 147
Copyright
Copyright © Materials Research Society 2000

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References

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