Hostname: page-component-586b7cd67f-t7czq Total loading time: 0 Render date: 2024-11-29T08:50:39.955Z Has data issue: false hasContentIssue false

AlCu Pattern Generation on 3D StructuredWafer Using Multi Level Exposure Method on Electrodeposited Polymer Material

Published online by Cambridge University Press:  01 February 2011

Vineet Sharma
Affiliation:
Hewlett-Packard Singapore, 1150 Depot Road Singapore 109673
Arief B. Suriadi
Affiliation:
Hewlett-Packard Singapore, 1150 Depot Road Singapore 109673
Frank Berauer
Affiliation:
Hewlett-Packard Singapore, 1150 Depot Road Singapore 109673
Laurie S. Mittelstadt
Affiliation:
Hewlett-Packard Company, 1501 Page Mill Rd, Palo Alto, CA 94304-1100, USA
Get access

Abstract

Normal photolithography tools have focal depth limitations and are unable to meet the expectations of high resolution photolithography on highly topographic structures. This paper shows a cost effective and promising technique of combining two different approaches to achieve critical dimensions of traces on slope pattern continuity on highly topographic structures. Electrophoretically deposited photoresist is used on 3-D structured wafers. This photoresist coating technique is fairly known in the MEMS industries to achieve uniform and conformal photoresist films on 3D surfaces. Multi step exposures are used to expose electrophoretically deposited photoresist. AlCu (Cu-0.5%), 0.47-0.53 μm thick metal film is deposited on 3D structured silicon substrate to plate photoresist. By combining these two novel methods, metal (AlCu) traces of 75 μm line width and 150 μm pitch (from top flat to down the slope) have been demonstrated on isotropically etched 350 μm deep trenches with 5-10% line width loss.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Suriadi, A. B., Sharma, V., Wieder, B. and Mittendorfer, G., in Materials & Process Integration for MEMS, edited by Tay, Francis E. H. (Kluwer Academic Publishers, The Netherlands, 2002), p. 205.Google Scholar
2. Luxbacher, T. and Mirza, A., Sensors, 16, No. 7, 61 (1999).Google Scholar
3. Emmons, William D. Winkle and Mark, R., US Patent No. 4,592,816 (3 June 1986).Google Scholar
4. Vidusek, D. A., Circuit world, 15, 2 (1989).Google Scholar
5. Suriadi, A. B., Berauer, F., Yasunaga, A., Pan, A. and Vanderplas, H., in the Proc. of SPIE's 27th Annual International Symposium on Microlithography, CA, 3-8 March 2002.Google Scholar
6. Schnupp, R., Baumgärtner, R., Kühnhold, R. and Ryssel, H., Sensors and Actuators A, 85 (2000) 310 (1999).Google Scholar