Hostname: page-component-78c5997874-lj6df Total loading time: 0 Render date: 2024-11-05T05:02:35.696Z Has data issue: false hasContentIssue false
  • English
  • Français

AFM-based Electrical Characterization of Nano-structures

Published online by Cambridge University Press:  11 February 2011

Sujit K. Biswas ,
Sandra B. Schujman ,
Robert Vajtai ,
Bingqing Wei ,
Allen Parker ,
Leo J. Schowalter  and
Pulickel M. Ajayan
Sujit K. Biswas
Affiliation:
Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, Troy, NY 12180–3590, U.S.A.
Sandra B. Schujman
Affiliation:
Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, Troy, NY 12180–3590, U.S.A.
Robert Vajtai
Affiliation:
Department of Material Science and Engineering, Rensselaer Polytechnic Institute, Troy, NY 12180–3590, U.S.A.
Bingqing Wei
Affiliation:
Department of Material Science and Engineering, Rensselaer Polytechnic Institute, Troy, NY 12180–3590, U.S.A.
Allen Parker
Affiliation:
Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, Troy, NY 12180–3590, U.S.A.
Leo J. Schowalter
Affiliation:
Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, Troy, NY 12180–3590, U.S.A.
Pulickel M. Ajayan
Affiliation:
Department of Material Science and Engineering, Rensselaer Polytechnic Institute, Troy, NY 12180–3590, U.S.A.
Get access

Abstract

Carbon nanotubes have the potential of being used as interconnects and active semiconducting material in future electronic circuits. It is necessary to study such nano-scale circuits with probes that can make measurements with molecular precision. We describe results using two nanoprobe techniques, namely scanning surface potential microscopy (SSPM), and conductive tip atomic force microscopy (CT-AFM), in the investigation of electrical properties of nanotube circuits. Vertical arrays of multi-walled nanotubes, grown in a porous alumina template with a metal back contact were analyzed. Current mapping confirmed that the nanotubes were electrically connected to the back contact. Isolated single-walled nanotube bundles deposited on an oxidized silicon wafer, and contacted electrically through chromium electrodes were also studied. Contact potential differences between the metal and nanotubes, and the current in some connected nanotubes were measured. Measurements of contact potential with different metals, and the nature of microscopic transport is crucial. Contact potential measurements can also provide fast and reliable characterization of junctions between metallic and semiconducting nanotubes and metals electrodes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 738: Symposium G – Spatially Resolved Characterization of Local Phenomena in Materials and Nanostructures , 2002 , G9.2
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Bachtold, A., Hadley, P., Nakanishi, T., and Dekker, C., Science 294, 1317 (2001)Google Scholar
Friedbacher, G., and Fuchs, H., Pure Appl. Chem. 71, 1337 (1999)Google Scholar
3. Bachtold, A., Fuhrer, M. S., Plyasunov, S., Forero, M., Anderson, E.H., Zettl, A., and McEuen, P.L., Phys. Rev. Lett. 84, 6082 (2000)Google Scholar
4. Freitag, M., Radosavljevic, M., Clauss, W., and Johnson, A. T., Phys. Rev. B 62, R2307 (2000)Google Scholar
5. Nonnenmacher, M., O'Boyle, M. P., and Wickramasinghe, H. K., Appl. Phys. Lett. 58, 2921 (1991)Google Scholar
6. Fujiwara, A., Iijima, R., Ishii, K., Suematsu, H., Kataura, H., Maniwa, Y., Suzuki, S., and Achiba, Y., Appl. Phys. Lett. 80, 1993 (2002)Google Scholar
7. Wei, B.Q., Vajtai, R., Jung, Y., Ward, J., Zhang, R., Ramanath, G., and Ajayan, P.M., Nature 416, 495 (2002)Google Scholar
8. Li, J., Stevens, R., Delzeit, L., Ng, H.T., Cassell, A., Han, J., and Meyyappan, M., Appl. Phys. Lett. 81, 910 (2002)Google Scholar
9. Nakanishi, T., Bachtold, A., and Dekker, C., Phys. Rev. B 66, 73307 (2002)Google Scholar