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Advances in the CMP Process on Fixed Abrasive Pads for the Polishing of SOISubstrates with High Degree of Flatness

Published online by Cambridge University Press:  15 March 2011

Martin Kulawski
Affiliation:
VTT Microelectronics, Tietotie 3, P.O. Box 1208, FIN-02044 VTT; Espoo;, Finland
Hannu Luoto
Affiliation:
VTT Microelectronics, Tietotie 3, P.O. Box 1208, FIN-02044 VTT; Espoo;, Finland
Kimmo Henttinen
Affiliation:
VTT Microelectronics, Tietotie 3, P.O. Box 1208, FIN-02044 VTT; Espoo;, Finland
Ilkka Suni
Affiliation:
VTT Microelectronics, Tietotie 3, P.O. Box 1208, FIN-02044 VTT; Espoo;, Finland
Frauke Weimar
Affiliation:
:3M Deutschland GmbH; Carl-Schurz-Str.1; D-41453 Neuss;, Germany
Jari Mäkinen
Affiliation:
:Okmetic Oy; Piitie 2; P.O. Box 44; FIN-01301 Vantaa;, Finland
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Abstract

The new approach using Fixed Abrasive (FA) pads for polishing thick film Silicon-on- Insulator (SOI) wafers after bonding and grinding process [1] has been further developed. The aim is a practicable industrial manufacturing process, where the major specifications especially in long term stability and removal rate should be achieved. In base line studies a stable removal rate on suitable level has been reached, while the degeneration of the total thickness variation (TTV) was limited to a clearly smaller value than that being typical for the standard stock removal polishing. The overall removal in these tests was adjusted to 2-3 μm, which removes all sub surface damage (SSD) from wafers ground by ultra fine grinding wheels with very small average abrasive particle size. The process has been able to remove all visible grindlines after removing less than 1.5 μm. In another test with a further developed high density FA pad, removal rates up to ∼0.6 μm/min were achieved. The polished samples were further processed and characterized by capacitive thickness measurements gauges, optical surface inspection tool (“Magic mirror”), atomic force microscopy (AFM) and optical reflection measurements.

Type
Research Article
Copyright
Copyright © Materials Research Society 2004

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References

[1]: , Kulawski et al. in A novel CMP Process on Fixed Abrasive Pads for Manufacturing of highly planar thick film SOI Substrates, ed. by Boning, D. S., Devrient, K., Oliver, M. R. Stein, D. J., Vos, I., (Mater. Res. Soc. Proc. 767, Warrendale, PA, 2003) pp. 133139 Google Scholar
[2]: Pietsch, G. J. et al. , Surface Science 331–333, 395401 (1995)Google Scholar
[3]: Steigerwald, J. M.; Muraka, S. P.; Gutmann, R. J., Chemical Mechanical Planarization of Microelectronic Materials (John Wiley & Sons Inc. NY 1997), pp. 140 Google Scholar
[4]: Gagliardi, J., 3M Fixed Abrasives for CMP, Poster presentation, Semicon West (1997)Google Scholar