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Advances in Amorphous Silicon Integrated Photonics Science and Technology

Published online by Cambridge University Press:  01 February 2011

G.P. Halada
Affiliation:
Department of Materials Science and Engineering., Stony Brook University, Stony Brook, NY 11794-2275
Samrat Chawda
Affiliation:
Department of Materials Science and Engineering., Stony Brook University, Stony Brook, NY 11794-2275
J. Mawyin
Affiliation:
Department of Materials Science and Engineering., Stony Brook University, Stony Brook, NY 11794-2275
R.J. Tonucci
Affiliation:
Naval Research Laboratory, 4555 Overlook Ave., Washington DC 20375
A.H. Mahan
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd. Golden, CO 80401
C.M. Fortmann
Affiliation:
Deptartment of Applied Mathematics, Stony Brook University, Stony Brook, NY 11794-3600
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Abstract

Over the past few years we have been developing a scientific basis for amorphous silicon-based integrated photonics technology. Waveguides using hydrogen-implanted, optically-smooth, hot-wire-deposited films have been prepared and demonstrated, and structures were characterized by Raman spectroscopy of the implanted and the non-implanted regions of the waveguide samples. The analysis is consistent with greater disorder in the film structure induced through implantation. More recently, materials prepared by femtosecond laser ablation of silicon powder have been characterized by Raman spectroscopy indicating a structure having both amorphous and crystalline components. As amorphous silicon photonics continues to evolve, the patterning of materials of differing crystallinity may become an issue of interest.

Type
Research Article
Copyright
Copyright © Materials Research Society 2005

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