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Advances in 4H-SiC Homoepitaxy for Production and Development of Power Devices

Published online by Cambridge University Press:  01 February 2011

Bernd Thomas ,
Christian Hecht ,
René Stein  and
Peter Friedrichs
Bernd Thomas
Affiliation:
[email protected], SiCED Electronics Development, Epitaxial Growth, Guenther-Scharowsky-Strasse 1, Erlangen, N/A, 91058, Germany, +499131731057, +499131723046
Christian Hecht
Affiliation:
[email protected], SiCED Electronics Development GmbH & Co KG, Guenther-Scharowsky-Strasse 1, Erlangen, N/A, 91058, Germany
René Stein
Affiliation:
[email protected], SiCED Electronics Development GmbH & Co KG, Guenther-Scharowsky-Strasse 1, Erlangen, N/A, 91058, Germany
Peter Friedrichs
Affiliation:
[email protected], SiCED Electronics Development GmbH & Co KG, Guenther-Scharowsky-Strasse 1, Erlangen, N/A, 91058, Germany
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Abstract

In this paper we present results of epitaxial layer deposition for production needs using our hot-wall CVD multi-wafer system. This equipment exhibits a capacity of 7x3” wafers per run and can be upgraded to a 6x4” setup. Characteristics of epilayers and reproducibility of the proc-esses are reported. Furthermore, we show recent results of p-type SiC homoepitaxial growth on 3” 4° off-oriented substrates using a single-wafer hot-wall CVD. The dependence of layer prop-erties on growth parameters, doping and thickness uniformity as well as doping memory effects are discussed. For the characterization of epitaxially grown pn-junctions first research grade pin-diodes were fabricated. The p-type emitters were either deposited in the same growth run to-gether with the n-type buffer and drift layers (continuous growth) or the n- and p-layers were grown in two different growth runs (separate growth).

Keywords

chemical vapor deposition (CVD) (deposition)epitaxyvapor phase epitaxy (VPE)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 911: Symposium B – Silicon Carbide 2006 – Materials, Processing and Devices , 2006 , 0911-B09-02
Copyright
Copyright © Materials Research Society 2006

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References

1 Bartsch, W., Mitlehner, H., Schoerner, R., Dohnke, K., Thomas, B., Stein, R. and Stephani, D., Proc. EPE 2003, Toulouse, France, CD publication ISBN 90-75815-07-7, paper 696Google Scholar
2 Bartsch, W., Elpelt, R., Schörner, R., Dohnke, K.O., Blöcher, B., Körber, K.: Paper ͹, published at EPE, Dresden, 2005 Google Scholar
3 Bergman, J.P., Lendenmann, H., Nilsson, P.A., Lindefelt, U. and Skytt, P., Mat. Sci. Forum Vols. 353–356 (2001), p. 299 Google Scholar
4 Sumakeris, J.J., Das, M.K., Ha, S., Hurt, E., Irvine, K., Paisley, M.J., O'Loughlin, M.J., Palmour, J.W., Skowronski, M., Hobgood, H. McD. and Carter, C. H. Jr, Mat. Sci. Forum Vols. 483–485 (2005), p. 155 Google Scholar
5 Sumakeris, J.J., Bergman, J.P., Das, M.K., Hallin, C., Hull, B.A., Janzen, E., Lendenmann, H., O'Loughlin, M.J., Paisley, M.J., Ha, S., Skowronski, M., Palmour, J.W. Carter, C. H. Jr, presented at ICSCRM 2005, Pittsburgh, USA, in printGoogle Scholar
6 Wischmeyer, F., Christiansen, K., Hecht, C., Berge, R., Stephani, D., Juergensen, H., Poster Presentation at ICSCRM 2001, Oct. 28. - Nov. 2., Tsukuba, JapanGoogle Scholar
7 Thomas, B., Hecht, C., Mat. Sci. Forum Vols. 483–485 (2005), p. 141 Google Scholar
8 Zhang, J., Forsberg, U., Isacson, M., Ellison, A., Henry, A., Kordina, O., Janzen, E.: J. Cryst. Growth Vol. 241 (2002), p.431 Google Scholar
9 Wada, K., Kimoto, T., Nishikawa, K. and Matsunami, H., presented at ICSCRM 2005, Pittsburgh, USA, in printGoogle Scholar
10 Hecht, C., Thomas, B. and Bartsch, W., presented at ICSCRM 2005, Pittsburgh, USA, in printGoogle Scholar
11 Peters, D., Friedrichs, P., Mitlehner, H., Schörner, R., Weinert, U., Weis, B., Stephani, D.: ISPSD 2000, Toulouse, France, p.241 Google Scholar