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Advanced Excimer Laser Annealing of Thin Poly Si Films after Solid Phase Grain Growth

Published online by Cambridge University Press:  25 February 2011

Takashi Noguchi ,
Kazuhiro Tajima  and
Yasushi Morita
Takashi Noguchi
Affiliation:
Research and development Dept. Semiconductor Group, SONY, 4-14-1 Asahi-cho, Atsugi-city 243, Japan
Kazuhiro Tajima
Affiliation:
Research and development Dept. Semiconductor Group, SONY, 4-14-1 Asahi-cho, Atsugi-city 243, Japan
Yasushi Morita
Affiliation:
Research and development Dept. Semiconductor Group, SONY, 4-14-1 Asahi-cho, Atsugi-city 243, Japan
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Abstract

Thin silicon films with dendritic large grains can be obtained by Si+ or P+ implantation and subsequent low temperature annealing of the silicon film. We tried further exposing the films with an excimer laser after the grain growth. As a result, improvement of electronic properties such as high carrier mobility or low resistivity were obtained. By TEM observation, polycrystalline grains with a dendritic structure did not melt after laser annealing and it was found that the improvement of electronic properties were achieved mainly due to the improvement of crystallinity by U-V(Ultra-Violet) reflectance, ESR(Electron Spin Resonance) analysis and TFT characteristics. We are convinced that this advanced laser pulse annealing method is an ideal RTA process in the near future and is expected to be applicable to ULSI processes for inter connects, high density stacked SRAM and for large area electronics on glass such as a contact line sensor or LCD(Liquid Crystal Display).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 146: Symposium B – Rapid Thermal Annealing/Chemical Vapor Deposition and Integrated Processing , 1989 , 35
Copyright
Copyright © Materials Research Society 1989

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References

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