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Adsorption of Oxygen in Laser-Induced Amorphous Silicon

Published online by Cambridge University Press:  15 February 2011

Yung S. Liu ,
S. W. Chiang  and
F. Bacon
Yung S. Liu
Affiliation:
General Electric Research and Development Center, Schenectady, New York, 12301USA
S. W. Chiang
Affiliation:
General Electric Research and Development Center, Schenectady, New York, 12301USA
F. Bacon
Affiliation:
General Electric Research and Development Center, Schenectady, New York, 12301USA
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Abstract

Amorphous silicon has been produced on a single crystalline silicon surface by intense UV laser radiation at 266 nm followed by rapid quenching. In addition, formation of oxide of several tens of nanometers has been observed when irradiation takes place in air or in O2 ambient. Various experimental techniques including Transmission Electron Microscopy (TEM), sputtered Auger Electron Spectroscopy (AES), and differential Fourier-transform IR spectroscopy (FT-IR) have been employed to study adsorption of oxygen during rapid melting and resolidification process. The present results suggest a new processing technique for forming thin oxide film, namely, “Laser-induced oxidation.”

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1: Symposium – Laser and Electron-Beam Solid Interactions in Materials Processing , 1980 , 117
Copyright
Copyright © Materials Research Society 1981

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References

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