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The Adsorption of Gallium on the Cleaved Surface of InP,InAs and InSb

Published online by Cambridge University Press:  25 February 2011

W.N. Rodrigues  and
W. Mönch
W. Mönch
Affiliation:
Laboratorium für Festkörperphysik, Universität Duisburg, D–4100 Duisburg, Federal Republic of Germany
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Extract

Studies of chemical trends may provide additional insights in complicated reactions between adsorbates and substrates. Here, the interaction of gallium with InP, InAs and InSb cleaved surfaces was investigated by using photoemission spectroscopy (UPS).

Ga was evaporated from a Knudsen-type cell which was placed at a distance of approximately 15 cm in front of the surfaces cleaved in situ. After the evaporation rate, which was monitored by using a quartz oscillator, had stabilized the amount of Ga deposited was determined from the exposure time. The film thicknesses given in A are nominal values since Ga was found to exhibit island growth. The energy distribution curves (EDC-s) of the photoemitted electrons, which were excited by HeI and HeII radiation provided by a home-built discharge lamp, were recorded by using a single or a double-pass cylindrical mirror analyzer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 148: Symposium D – Chemistry and Defects in Semiconductor Heterostructures , 1989 , 197
Copyright
Copyright © Materials Research Society 1989

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References

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