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Admittance of a-Si:H/c-Si Schottky Diodes

Published online by Cambridge University Press:  10 February 2011

S. Gall ,
R. Hirschauer ,
M. Kolter  and
D. Bräunig
S. Gall
Affiliation:
Hahn-Meitner-Institut Berlin, Dept. AT, Glienicker Str. 100, D-14109 Berlin, Germany
R. Hirschauer
Affiliation:
Hahn-Meitner-Institut Berlin, Dept. AT, Glienicker Str. 100, D-14109 Berlin, Germany
M. Kolter
Affiliation:
Forschungszentrum Jülich, Dept. ISI-PV, D-52425 Jülich, Germany
D. Bräunig
Affiliation:
Hahn-Meitner-Institut Berlin, Dept. AT, Glienicker Str. 100, D-14109 Berlin, Germany
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Abstract

We have measured the admittance (conductance and capacitance) of a-Si:H/c-Si heterostructure Schottky diodes as a function of frequency, temperature and voltage in the dark and under spectral illumination (in the wavelength range between λ=500nm and λ=1200nm). Thus, it is possible to observe the activation/deactivation of trapping-detrapping effects within the a-Si:H layer (near the a-Si:H/c-Si interface). We have determined the conduction band offset of the a-Si:H/c-Si heterostructure. The spectral behaviour of the admittance is dominated by the absorption of light in the c-Si and the valence band offset of the heterojunction. We have also developed an equivalent circuit of the a-Si:H/c-Si heterostructure Schottky diode in the dark, which is capable of describing the measured behaviour.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 420: Symposium A – Amorphous Silicon Technology-1996 , 1996 , 245
Copyright
Copyright © Materials Research Society 1996

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References

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