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The Adhesion and the Protection of Metallic Impurities at the Interface of Si Wafer Surface with Anion Species

Published online by Cambridge University Press:  21 February 2011

Hideki Aomi ,
Francois Derouin  and
Tadahiro Ohmi
Hideki Aomi
Affiliation:
Department of Electronics, Faculty of Engineering, Tohoku University Aza Aoba, Aramaki, Aoba-ku, Sendai, 980, Japan
Francois Derouin
Affiliation:
Department of Electronics, Faculty of Engineering, Tohoku University Aza Aoba, Aramaki, Aoba-ku, Sendai, 980, Japan
Tadahiro Ohmi
Affiliation:
Department of Electronics, Faculty of Engineering, Tohoku University Aza Aoba, Aramaki, Aoba-ku, Sendai, 980, Japan
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Abstract

Since Cu has a high electronegativity compared to Si, it is believed that Cu2+, cation reacts with electrons in Si wafer surface to reduce the Cu and adhere directly onto Si surface in diluted HF (DHF) solution. We have examined the anion species which are included in DHF solution and investigated their influence on Cu adhesion onto Si surface. It was found that Cu does not adhere to hydrogen terminated Si surface, while the presence of halogens such as Cl (chlorine) or Br (bromine) accelerates the adherence of Cu onto Si surface. In addition, it has been revealed that HCI / H2O2 cleaning before DHF cleaning also enhances the contamination with Cu on Si surface, i.e., HCI / H2O2 cleaning must be eliminated in wet cleaning steps of Si surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 315: Symposium Y – Surface Chemical Cleaning and Passivation for Semiconductor Processing , 1993 , 333
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

[1] Kern, W. and Puotinen, D. A., RCA Rev., 31, pp.187–206, (1970)Google Scholar
[2] Shimono, T. and Tsuji, M., Extended Abstracts of Electrochem. Soc., Spring Meeting, 91–1, pp.278–279, (1991)Google Scholar
[3] Ohmi, T., Imaoka, T., Sugiyama, I., and Kezuka, T., J. Electrochem. Soc., Vol.139, No.11, Nov, pp.3317–3335, (1992)CrossRefGoogle Scholar
[4] Ohmi, T., Imaoka, T., Kezuka, T., Takano, J., and Kogure, M., J. Electrochem. Soc., Vol.140, No.3, Mar, pp.811–818, (1993)CrossRefGoogle Scholar
[5] Chabal, Y. J., Higashi, G. S., Raghavachari, K., and Burrows, V. A, J. Vac. Sci. Technol., A7(3), May/Jun, pp.2104–2109, (1989)CrossRefGoogle Scholar
[6] Higashi, G. S., Chabal, Y. J., Trucks, G. W., and Raghavachari, K., Appl. Phys. Lett., 56(7), 12, Feb, pp.656–658, (1990)Google Scholar
[7] Chabal, Y. J., Mat. Res. Soc. Symp. Proc., Vol.259, pp.349–360, (1992)Google Scholar