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Activation of Mg acceptors in GaN:Mg monitored by electron paramagnetic resonance spectroscopy.

Published online by Cambridge University Press:  11 February 2011

D. Matlock ,
M. E. Zvanut ,
Jeffrey R. DiMaio ,
R. F. Davis ,
R. L. Henry ,
Daniel Koleske  and
Alma Wickenden
D. Matlock
Affiliation:
Department of Physics, University of Alabama at Birmingham, 310 CH, Birmingham, AL 35294–1170
M. E. Zvanut
Affiliation:
Department of Physics, University of Alabama at Birmingham, 310 CH, Birmingham, AL 35294–1170
Jeffrey R. DiMaio
Affiliation:
Department of Materials Science and Engineering, North Carolina State University
R. F. Davis
Affiliation:
Department of Materials Science and Engineering, North Carolina State University
R. L. Henry
Affiliation:
Naval Research Laboratory, Code 6861 Washington D.C 20375
Daniel Koleske
Affiliation:
Sandia National Laboratories, P.O. Box 5800–0601, Albuquerque, NM 87185–0601
Alma Wickenden
Affiliation:
U.S. Army Research Laboratory, Adelphi MD, 20783–1197
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Abstract

Hydrogen removal from Mg-doped GaN is necessary to activate p-type conductivity, but the exact chemical process is not yet clear. We have investigated this issue by monitoring the intensity of an electron paramagnetic resonance (EPR) signal attributed to Mg through a series of isochronal and isothermal anneals between 600 and 1000 °C. Measurements made on GaN:Mg epitaxial layers deposited on SiC and annealed between 700 and 850 °C indicate that the Mg-related EPR signal increases with temperature as expected for depassivation of a Mg complex by removal of hydrogen. However, data obtained outside this temperature range suggest that additional processes may occur. For example, as-deposited films contain a signal resembling the Mg acceptor that is quenched by a 650 °C N2 anneal. Also, for all samples, N2 annealing at T>850 °C irreversibly decreases the signal thought to be due to Mg. Although the presence of the signal in the as-grown films is not fully understood, the effects observed at T>850 °C may be attributed to preferential N-desorption from Mg-N-H complexes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 743: Symposium L – GaN and Related Alloys , 2002 , L11.59
Copyright
Copyright © Materials Research Society 2003

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References

REFERENCES

1. Nakamura, S., Iwasa, N., Senoh, M., and Mukai, T., Jpn. J. Appl. Phys. 31, Pt. 1, 1258 (1992).Google Scholar
2. Gotz, W., Johnson, N.M., Walker, J., and Bour, D.P., Appl. Phys. Lett. 67 2666 (1995).Google Scholar
3. Gotz, W., Johnson, N.M., Walker, J., Bour, D.P., and Street, R.A., “Activation of acceptors in Mg-doped GaN grown by metalorganic chemical vapor deposition”, Appl. Phys. Lett. 68, 667 (1996).Google Scholar
4. Clerjaud, B., Cote, D., Lebkiri, A., Naud, C., Baranowski, J. M., Pakula, K., Wasik, D., and Suski, T., Phys. Rev. B 61, 8238 (2000).Google Scholar
5. Gotz, W., Johnson, N.M., Bour, D.P., McCluskey, M.D., and Haller, E.E., Appl. Phys. Lett. 69, 3725 (1996).Google Scholar
6. Glaser, E.R., Carlos, W. E., Braga, G.C.B., Freitas, J.A. Jr. Moore, W. J., Shanabrook, B.V., Henry, R.L., Wickenden, A.E., and Koleske, D.D., Phy. Rev. B65, 085312 (2002).Google Scholar
7. Lorenz, M.R. and Binkowski, B.B., J. Electrochem. Soc. 109, 24 (1962).Google Scholar
8. Koleske, D.D., Wickenden, A.E., Henry, R.L., Culbertson, J.C., and Twigg, M.E., J. Crystal Growth 223, 466–483 (2001).Google Scholar