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Activation Enthalpy of Sb Diffusion in Biaxially Compressed SiGe Layers

Published online by Cambridge University Press:  10 February 2011

A.Yu. Kuznetsov ,
J. Cardenas ,
B.G. Svensson ,
A. Nylandsted Larsen  and
J. Lundsgaard Hansen
A.Yu. Kuznetsov
Affiliation:
Royal Institute of Technology, Solid State Electronics, Electrum 229, S 164 40 Kista-Stockholm, Sweden; [email protected]
J. Cardenas
Affiliation:
Royal Institute of Technology, Solid State Electronics, Electrum 229, S 164 40 Kista-Stockholm, Sweden
B.G. Svensson
Affiliation:
Royal Institute of Technology, Solid State Electronics, Electrum 229, S 164 40 Kista-Stockholm, Sweden
A. Nylandsted Larsen
Affiliation:
Institute of Physics and Astronomy, University of Aarhus, Aarhus, DK- 8000, Denmark
J. Lundsgaard Hansen
Affiliation:
Institute of Physics and Astronomy, University of Aarhus, Aarhus, DK- 8000, Denmark
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Abstract

Enhanced Sb diffusion in biaxially compressed Si1-xGex layers is observed. Assuming the prefactors to be stress independent the Sb diffusion coefficients in biaxially compressed Si0.9Ge0.1 and Si0.8Ge0.2 were extracted as 0.4 × 102 exp[−(3.98(eV)±0.12)/kT] and 1.3 × 102 exp[−(3.85(eV)±0.12)/kT] cm2/s, respectively. The activation volume of Sb diffusion in Si1-xGex (× ≤ 0.2) is estimated to be close to Ω, where Ω is the volume corresponding to a silicon lattice site.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 527: Symposium Z – Diffusion Mechanisms in Crystalline Materials , 1998 , 435
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

1.An extensive bibliography can be found in the recent PhD thesis by Mitha, S., PhD Thesis, Harvard University, 1995.Google Scholar
2.See, for instance the review paper by Larsen, A. Nylandsted and Kringhoj, P., Physica Scripta, T69 92 (1997) and references therein.Google Scholar
3. Larsen, A. Nylandsted and Kringhoj, P., Appl.Phys.Lett., 68, 2684(1996).Google Scholar
4.Indeed, the narrower a SilxGex layer the higher annealing temperature (and/or the higher Ge content) can be used without the occurrence of the stress relaxation. For details on the thickness/content/relaxation temperature dependence see Hull, R., in Properties of Strained and Relaxed Silicon Germanium (INSPEC, London, UK) 1995.Google Scholar
5. Noble, D.B., Hoyt, J.L., Gibbons, J.F., Scott, M.P., Laderman, S.S., Rosner, S.J. and Kamins, T.I., Appl.Phys.Lett., 55, 1978(1989)Google Scholar
6. Jain, S.C., Maes, H.E., Pinardi, K. and Wolf, I. De, J.Appl.Phys., 79, 8145(1996).Google Scholar
7.A linear extrapolation from Si and Ge elastic constants to the actual alloy composition was used in the present estimation of σ. For more details see Baker, S.P. and Artz, E., in Properties of Strained and Relaxed Silicon Germanium (INSPEC, London, UK) 1995.Google Scholar
8. Kringhøj, P., Larsen, A. Nylandsted and Shirayev, S.Yu., Phys.Rev.Lett, 76, 3372(1996).Google Scholar
9. Paine, A.D.N., Morooka, M., Willoughby, A.F.W., Bonar, J.M., Phillips, P., Dowsett, M.J., and Cooke, G., Mat. Sci. For. 196–201 345 (1995).Google Scholar
10. Shewmon, P.G., Diffusion in Solids, (J. Williams Book Company, Jenks, USA), 1983.Google Scholar
11. Jeffery, R.N. and Lazarus, D., J. Appl. Phys. 41 3186 (1970).Google Scholar
12.For the case of point defect assisted diffusion ΔV = ΔVf + ΔVm , where ΔVf and ΔVm are the formation and migration volumes of the defect mediating the diffusion process. In its turn the values of ΔV f and ΔVf should not exceed Ω for conventional solids (see Ref. 10).Google Scholar
13. Aziz, M.J., Appl. Phys. Lett. 70 2810 (1997).Google Scholar
14. Kuznetsov, A.Yu., Cardenas, J., Grahn, J., Svensson, B.G., Hansen, J. Lundsgaard, and Larsen, A. Nylandsted, submitted to Phys. Rev. B (980223).Google Scholar