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Accurate Monte Carlo Simulation of Ion Implantation into Arbitrary 1D/2D/3D Structures for Silicon Technology

Published online by Cambridge University Press:  17 March 2011

Shiyang Tian ,
Victor Moroz  and
Norbert Strecker
Shiyang Tian
Affiliation:
Synopsys, Inc., 14911 Quorum Dr., Dallas, Texas 75254
Victor Moroz
Affiliation:
Synopsys, Inc., 700 East Middlefield Road, Mountain View, CA 94043
Norbert Strecker
Affiliation:
Synopsys, Inc., 700 East Middlefield Road, Mountain View, CA 94043
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Abstract

We present an integrated Monte Carlo implant simulator which is capable of accurately simulating ion implantation into any amorphous materials and crystalline Si for 1D/2D/3D structures with arbitrary geometry and topography. With this simulator, we investigate some practical examples which reveal interesting 2D/3D effects, and demonstrate the importance of <110> channeling for sub-100nm silicon technology.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 810: Symposium C – Silicon Front-End Junction Formation-Physics and Technology , 2004 , C6.5
Copyright
Copyright © Materials Research Society 2004

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References

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