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Accurate Lattice Constant and Mismatch Measurements of SiC Heterostructures by X-Ray Multiple-Order Reflections

Published online by Cambridge University Press:  11 February 2011

XianRong Huang ,
Michael Dudley ,
Philip G. Neudeck  and
J. Anthony Powell
XianRong Huang
Affiliation:
Department of Materials Science and Engineering, SUNY at Stony Brook, Stony Brook, NY 11794–2275, U.S.A.
Michael Dudley
Affiliation:
Department of Materials Science and Engineering, SUNY at Stony Brook, Stony Brook, NY 11794–2275, U.S.A.
Philip G. Neudeck
Affiliation:
NASA Glenn Research Center, Cleveland, Ohio 44135, U.S.A.
J. Anthony Powell
Affiliation:
NASA Glenn Research Center, Cleveland, Ohio 44135, U.S.A.
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Abstract

High-resolution X-ray diffraction (HRXRD) combined with other diffraction techniques is applied to characterize 3C SiC epilayers hoteroepitaxially grown on atomically flat mesas on 4H and 6H SiC substrates. Small-beam rocking curve scan and reciprocal mapping show extremely high crystalline perfection and homogeneity of the ideally grown 3C-SiC epilayers. Accurate lattice measurements based on X-ray multiple-order reflections reveal that: 1) no misorientation between the (0001) lattice planes across the 4H/3C or 6H/3C interface is detected, confirming the 2D nucleation mechanism of the 3C epilayer from a flat coherent interface; 2) in-plane substrate/epilayer lattice mismatch always exists, but the 3C epilayers do not correspond to a completely relaxed cubic structure, indicating that the epilayers are partially strained; 3) lattice mismatch varies for different regions, implying a complicated strain relaxation mechanism of 3C epilayers on various mesas.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 742: Symposium K – Silicon Carbide-Materials, Processing, and Devices , 2002 , K3.8
Copyright
Copyright © Materials Research Society 2003

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References

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