Hostname: page-component-cd9895bd7-hc48f Total loading time: 0 Render date: 2024-12-27T17:31:54.611Z Has data issue: false hasContentIssue false
  • English
  • Français

Acceptor and Donor Impurities in Semiconductors Studied by the PAC—Method

Published online by Cambridge University Press:  28 February 2011

Doris Forkel ,
H. Futtinger ,
M. Iwatschenko-Borho ,
F. Meyer ,
W. Witthuhn  and
H. Wolf
Doris Forkel
Affiliation:
Physikalisches Institut der Universität Erlangen-Nürnberg, Erwin—Rommel—Str.1 8520 Erlangen, Germany
H. Futtinger
Affiliation:
Physikalisches Institut der Universität Erlangen-Nürnberg, Erwin—Rommel—Str.1 8520 Erlangen, Germany
M. Iwatschenko-Borho
Affiliation:
Physikalisches Institut der Universität Erlangen-Nürnberg, Erwin—Rommel—Str.1 8520 Erlangen, Germany
F. Meyer
Affiliation:
Physikalisches Institut der Universität Erlangen-Nürnberg, Erwin—Rommel—Str.1 8520 Erlangen, Germany
W. Witthuhn
Affiliation:
Physikalisches Institut der Universität Erlangen-Nürnberg, Erwin—Rommel—Str.1 8520 Erlangen, Germany
H. Wolf
Affiliation:
Physikalisches Institut der Universität Erlangen-Nürnberg, Erwin—Rommel—Str.1 8520 Erlangen, Germany
Get access

Abstract

The perturbed angular correlation method (PAC) is applied to semiconductors. This technique is based on the detection of the electric quadrupole hyperfine interaction by means of radioactive nuclei. The highly localized sensitivity of the PAC-method favours the investigation of localized distortions of the lattice due to impurities as donor or acceptor atoms.

Results are given for radioactive 111Cd atoms in the semiconductors In2 Te5, ZnO, and Si. The observed electric field gradients (EFG) and their orientations with respect to the crystal axes yield information on the local structure around the probe atoms. In Na—or Li—doped ZnO the formed Na—O—In (or Li—O—In) complexes show identical axial symmetric EFG tensors. In the case of In2Te5 acceptor level energies could be deduced from the temperature dependence of the EFG.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 46: Symposium B – Microscopic Identification of Electronic Defects in Semiconductors , 1985 , 481
Copyright
Copyright © Materials Research Society 1985

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

/l/ Kaufmann, E.N. and Vianden, R.J., Rev.Mod.Phys. 51(1979) 161 Google Scholar
/2/ Witthuhn, W. and Engel, W., in Hyperfine InteractTons of Radioactive Nuclei, Christiansen, J. (ed.), Springer, Berlin (1983)Google Scholar
/3/ Recknagel, E. et al., in “Google Scholar
/4/ Witthuhn, W., Hyperfine Interactions (1985) in pressGoogle Scholar
/5/ Hamilton, E.D. (ed.), The Electromagnetic Interaction in Nuclear Spectroscopy, North-Holland (1975)Google Scholar
/6/ Forkel, D. et al., Hyperfine Interactions, 15/16 (1983) 821 CrossRefGoogle Scholar
/7/ Forkel, D., Diplomarbeit, Erlangen (1981)Google Scholar
/8/ Wolf, H., Diplomarbeit, Erlangen (1985) and to be publishedGoogle Scholar
/9/ Kaufmann, E.N. et al., Journ. Appl. Phys. 48 (1977) 3332 Google Scholar
/10/ Deicher, M. et al., Contr. to the EPS spring meeting,1985,Berlin Google Scholar