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About the Electrical and Structural Properties of Erbium Thermally Diffused in Single Crystal Silicon

Published online by Cambridge University Press:  10 February 2011

S. Binetti ,
M. Acciarri ,
I. Gelmi  and
S. Pizzini
S. Binetti
Affiliation:
INFM- Department of Physical Chemistry and Electrochemistry, Via Golgi, 19 1-20133 Milano (Italy)
M. Acciarri
Affiliation:
INFM- Department of Physical Chemistry and Electrochemistry, Via Golgi, 19 1-20133 Milano (Italy)
I. Gelmi
Affiliation:
INFM- Department of Physical Chemistry and Electrochemistry, Via Golgi, 19 1-20133 Milano (Italy)
S. Pizzini
Affiliation:
INFM- Department of Physical Chemistry and Electrochemistry, Via Golgi, 19 1-20133 Milano (Italy)
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Abstract

Having preliminary confirmed the possibility of erbium doping by thermal diffusion, we have used this process to introduce erbium into a silicon substrate from metallic erbium or erbium oxide sources. Diffusion experiments were carried out at 1050, 1200 and 1250°C. The Er:Si diffused samples were investigated using four probe resistivity and thermopower techniques for the measure of the concentration and type of carriers, SIMS and Auger spectroscopy for chemical analysis of the diffused layers and photoluminescence (PL) measurements at temperatures ranging from 2 to 298 K for the detection of optical activity. None of the samples prepared presented measurable PL at 2 K, except for one single sample on top of which was deposited an erbium doped silica glass. The electrical properties, instead, were deeply influenced by doping, indicating the formation of both donor and acceptors.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 422: Symposium D – Rare-Earth Doped Semiconductors II , 1996 , 87
Copyright
Copyright © Materials Research Society 1996

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References

1. Coffa, S., Priolo, F., Franzb, G., Bellani, V., Carnera, A., Spinella, C., Phys. Rev. B 48,11782 (1993)Google Scholar
2. Benton, J.L., Eaglesham, D.J., Almonte, M., Citrin, P.H., Marcus, M.A., Adler, D.L., Jacobson, D.C., Poate, J.M., in Rare Earth doped semiconductors edited by Pomrenke, G.S., Klein, P.B., Langer, D.W. (Mater.Res.Soc.Symp.Proc. 301, Pittsburgh, PA (1993), pp. 119–124 Google Scholar
3. D'Avitaya, F. Arnaud, Campidelli, Y.,Chroboczek, J.A., Favennec, P.N., Haridon, H.L, Moutonnet, D., Wasiela, A., in Rare Earth doped semiconductors edited by Pomrenke, G.S., Klein, P.B., Langer, D.W. (Mat.Res.Soc.Symp.Proc. 301, Pittsburgh, PA (1993), pp. 97–100 Google Scholar
4. V.Aleksandrov, V.V Emtsev, Oloskin, D.S., Sobolev, N.A., E.I.Shek, Semiconduc. 28, 1126 (1994)Google Scholar
5. Nazyrov, E., Kulikov, G.S., Malkovich, R.Sh., Soy. Phys. Semicond. 25, 997 (1991)Google Scholar
6. Narducci, D., Girardi, G., Piseri, C., Solid State Phenomena (1996), acceptedGoogle Scholar
7. Handbuch, Gmelins, Teil C1 p.175, Teil C3 p.225, Springer Verlag (Berlin) 1976 Google Scholar