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6H and 4H-SiC Bulk Growth by PVT and Advanced PVT (APVT)

Published online by Cambridge University Press:  15 March 2011

A. Gupta ,
M. Yoganathan ,
E. Semenas ,
I. Zwieback ,
E. Emorhokpor ,
C. Martin ,
T. Kerr ,
A. Souzis ,
T. Anderson  and
J. Chen
...Show all authors
A. Gupta
Affiliation:
II-VI, Inc. 20 Chapin Rd, Suite 1005, Pine Brook, NJ 07058, USA
M. Yoganathan
Affiliation:
II-VI, Inc. 20 Chapin Rd, Suite 1005, Pine Brook, NJ 07058, USA
E. Semenas
Affiliation:
II-VI, Inc. 20 Chapin Rd, Suite 1005, Pine Brook, NJ 07058, USA
I. Zwieback
Affiliation:
II-VI, Inc. 20 Chapin Rd, Suite 1005, Pine Brook, NJ 07058, USA
E. Emorhokpor
Affiliation:
II-VI, Inc. 20 Chapin Rd, Suite 1005, Pine Brook, NJ 07058, USA
C. Martin
Affiliation:
II-VI, Inc. 20 Chapin Rd, Suite 1005, Pine Brook, NJ 07058, USA
T. Kerr
Affiliation:
II-VI, Inc. 20 Chapin Rd, Suite 1005, Pine Brook, NJ 07058, USA
A. Souzis
Affiliation:
II-VI, Inc. 20 Chapin Rd, Suite 1005, Pine Brook, NJ 07058, USA
T. Anderson
Affiliation:
II-VI, Inc. 20 Chapin Rd, Suite 1005, Pine Brook, NJ 07058, USA
J. Chen
Affiliation:
II-VI, Inc. 375 Saxonburg Blvd., Saxonburg, PA 16056, USA
C. Tanner
Affiliation:
II-VI, Inc. 375 Saxonburg Blvd., Saxonburg, PA 16056, USA
D. Barrett
Affiliation:
II-VI, Inc. 375 Saxonburg Blvd., Saxonburg, PA 16056, USA
R. Hopkins
Affiliation:
II-VI, Inc. 375 Saxonburg Blvd., Saxonburg, PA 16056, USA
C. Johnson
Affiliation:
II-VI, Inc. 375 Saxonburg Blvd., Saxonburg, PA 16056, USA
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Abstract

II-VI, Inc. is a commercial supplier of high-quality SiC substrates (including 2-inch and 3-inch diameter) for RF and power applications to the US market. Semi-insulating 6H-SiC single crystals, doped with vanadium and undoped (vanadium-free), as well as ntype 4H crystals have been grown using the PVT and Advanced PVT (APVT) growth techniques. The APVT process incorporates insitu synthesis and growth of of SiC crystal from Si and C precursors.

Grown 6H-SiC and 4H-SiC crystals have been extensively characterized with respect to their purity, crystal quality and electrical properties. COREMA resistivity maps demonstrate that V-compensated boules exhibited axially and radially uniform resistivity around 1011 ω.cm at room temperature. Undoped (V-free) wafers contained residual boron and nitrogen at levels below 1016 atoms/cm3, and demonstrated semi-insulating properties (resistivity between 106 and 1011 ω.cm) as a result of compensation by native point defects with deep levels in the bandgap. The undoped semi-insulating crystals grown by APVT contained boron and nitrogen at 1.9ω1015 cm−3 and 3.8.1015 cm−3, respectively.

High-quality 2-inch SiC wafers exhibited micropipe densities on the order of 10 cm−2 and dislocation density on the order of 104 cm−2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 815 , 2004 , J5.24
Copyright
Copyright © Materials Research Society 2004

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References

1. Hobgood, H. M., Glass, R. C., Augustine, G., Hopkins, R. H., Jenny, J., Skowronski, M., Mitchell, W.C., Roth, M., Appl. Phys. Lett. 66, 1364 (1995).Google Scholar
2. Barrett, Donovan L., Hobgood, Hudson M., McHugh, James P., and Hopkins, Richard H., U.S. Patent No. 5,611,955 (18 March 1997).Google Scholar
3. Jenny, J.R., Muller, St.G., Powell, A., Tsvetkov, V.F., Hobgood, H.M., Glass, R.C., and Carter, C.H. Jr., Journal of Electronic Material 31, 366 (2002).Google Scholar
4. Balkrishna, V., Augustine, G., Gaida, W.E., Thomas, R.N., and Hopkins, R.H., US Patent 6,056,820, May 2, 2000.Google Scholar