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500 °C Formation of Poly-Si1-xGex (x≥ 0.5) on SiO2 by Ion-beam Stimulated Solid Phase Crystallization

Published online by Cambridge University Press:  11 February 2011

Isao Tsunoda ,
Hiroshi Kanno ,
Atsushi Kenjo ,
Taizoh Sadoh  and
Masanobu Miyao
Isao Tsunoda
Affiliation:
Department of Electronics, Kyushu University, 6–10–1 Hakozaki, Fukuoka 812–8581, Japan
Hiroshi Kanno
Affiliation:
Department of Electronics, Kyushu University, 6–10–1 Hakozaki, Fukuoka 812–8581, Japan
Atsushi Kenjo
Affiliation:
Department of Electronics, Kyushu University, 6–10–1 Hakozaki, Fukuoka 812–8581, Japan
Taizoh Sadoh
Affiliation:
Department of Electronics, Kyushu University, 6–10–1 Hakozaki, Fukuoka 812–8581, Japan
Masanobu Miyao
Affiliation:
Department of Electronics, Kyushu University, 6–10–1 Hakozaki, Fukuoka 812–8581, Japan
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Abstract

Ion beam stimulated solid phase crystallization of a-Si1-xGex (0 ≤ x ≤ 1) on SiO2 has been investigated. The critical temperature to cause crystal nucleation can be successfully decreased by 150 °C for a-Si1-xGex with all Ge fractions (0 - 100 %) by using ion stimulation. As a result, crystal growth below the softening temperature (∼ 500 °C) of glass substrates was achieved for samples with Ge fractions exceeding 50 %. This method combined with Ge doping and ion stimulation will be a powerful tool to fabricate poly-SiGe TFTs on low cost glass substrates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 744: Symposium M – Progress in Semiconductors II–Electronic and Optoelectronic Applications , 2002 , M8.22
Copyright
Copyright © Materials Research Society 2003

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References

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