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4H-SiC Power Devices: Comparative Overview of UMOS, DMOS, and GTO Device Structures

Published online by Cambridge University Press:  10 February 2011

J. B. Casady ,
A. K. Agarwal ,
L. B. Rowland ,
S. Seshadri ,
R. R. Siergiej ,
S. S. Mani ,
D. C. Sheridan ,
P. A. Sanger  and
C. D. Brandt
J. B. Casady
Affiliation:
Northrop Grumman Science & Technology Center, Pittsburgh, PA–15235–5080Ph. (412) 256-1866, (412) 256–1877, [email protected]
A. K. Agarwal
Affiliation:
Northrop Grumman Science & Technology Center, Pittsburgh, PA–15235–5080Ph. (412) 256-1866, (412) 256–1877, [email protected]
L. B. Rowland
Affiliation:
Northrop Grumman Science & Technology Center, Pittsburgh, PA–15235–5080Ph. (412) 256-1866, (412) 256–1877, [email protected]
S. Seshadri
Affiliation:
Northrop Grumman Science & Technology Center, Pittsburgh, PA–15235–5080Ph. (412) 256-1866, (412) 256–1877, [email protected]
R. R. Siergiej
Affiliation:
Northrop Grumman Science & Technology Center, Pittsburgh, PA–15235–5080Ph. (412) 256-1866, (412) 256–1877, [email protected]
S. S. Mani
Affiliation:
Northrop Grumman Science & Technology Center, Pittsburgh, PA–15235–5080Ph. (412) 256-1866, (412) 256–1877, [email protected]
D. C. Sheridan
Affiliation:
Northrop Grumman Science & Technology Center, Pittsburgh, PA–15235–5080Ph. (412) 256-1866, (412) 256–1877, [email protected]
P. A. Sanger
Affiliation:
Northrop Grumman Science & Technology Center, Pittsburgh, PA–15235–5080Ph. (412) 256-1866, (412) 256–1877, [email protected]
C. D. Brandt
Affiliation:
Northrop Grumman Science & Technology Center, Pittsburgh, PA–15235–5080Ph. (412) 256-1866, (412) 256–1877, [email protected]
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Abstract

Silicon Carbide (SiC) is an emerging semiconductor material which has been widely predicted to be superior to both Si and GaAs in the area of power electronic switching devices [1]. This paper presents an overview of SiC power devices and concludes that MOS Turn-Off Thyristor (MTOTM) is one of the most promising near term SiC switching device given its high power potential, ease of turn-off, 500°C operation and resulting reduction in cooling requirements. It is further concluded that in order to take advantage of SiC power devices, high temperature packages and components with double sided attachment need to be developed along with the SiC power devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 483: Symposium E – Power Semiconductor Materials & Devices , 1997 , 27
Copyright
Copyright © Materials Research Society 1998

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References

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