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1D and 2D Monte Carlo Simulations of Pulsed Laser Ablation of Si/Ga Into Ar/O2 with a Substrate

Published online by Cambridge University Press:  15 February 2011

D. L. Capewell  and
D. G. Goodwin
D. L. Capewell
Affiliation:
Division of Engineering and Applied Science California Institute of Technology. Pasadena, CA 91125.
D. G. Goodwin
Affiliation:
Division of Engineering and Applied Science California Institute of Technology. Pasadena, CA 91125.
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Abstract

The Direct Simulation Monte Carlo (DSMC) method is applied to the problem of pulsed laser deposition in both ID and 2D axisymmetric simulations. A source of target atoms expands into a cylindrical volume containing a background gas at room temperature and pressures up to 100 mTorr in the presence of a diffusely reflecting substrate. At regular intervals, the density and temperature of each species are computed. Particle flux and energy per particle incident on the substrate are also monitored as functions of time. The simulation results qualitatively compare, well with experimental plume diagnostics, with measured film growth rates as a function of background gas pressure, and with measured changes in film growth stoichiometry resulting from the introduction of a background gas into a two-component PLD system.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 389: Symposium R – Modedling and Simulation of Thin-Film Processing , 1995 , 367
Copyright
Copyright © Materials Research Society 1995

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References

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