Hostname: page-component-78c5997874-ndw9j Total loading time: 0 Render date: 2024-11-20T01:09:29.202Z Has data issue: false hasContentIssue false
  • English
  • Français

1.54 μm Photoluminescence of Erbium Implanted Hydrogenated Amorphous Silicon

Published online by Cambridge University Press:  21 February 2011

M. Kechouane ,
N. Beldi ,
T. Mohammed-Brahim ,
H. L'Haridon ,
M. Salvi ,
M. Gauneau  and
P.N. Favennec
M. Kechouane
Affiliation:
Lab “Les Couches Minces”, USTBH, Institut de Physique, BP 32, el alia, ALGER, ALGERIE
N. Beldi
Affiliation:
Lab “Les Couches Minces”, USTBH, Institut de Physique, BP 32, el alia, ALGER, ALGERIE
T. Mohammed-Brahim
Affiliation:
Lab “Les Couches Minces”, USTBH, Institut de Physique, BP 32, el alia, ALGER, ALGERIE
H. L'Haridon
Affiliation:
FRANCE TELECOM/CNET, LAB OCM, BP 40, 22301 LANNION, FRANCE
M. Salvi
Affiliation:
FRANCE TELECOM/CNET, LAB OCM, BP 40, 22301 LANNION, FRANCE
M. Gauneau
Affiliation:
FRANCE TELECOM/CNET, LAB OCM, BP 40, 22301 LANNION, FRANCE
P.N. Favennec
Affiliation:
FRANCE TELECOM/CNET, SAS, BP 40, 22301 LANNION, FRANCE
Get access

Abstract

The luminescence of erbium implanted in hydrogenated amorphous silicon (a-Si : H) is presented. For the first time an intense and relatively sharp luminescence at 1.54 mm is observed in a-Si : H, using implanted erbium. The Er+ emission intensity strongly depends on the hydrogen film content and on the measurement temperature. A direct correlation between the optical gap energy of the semiconductor and the hydrogen film content is observed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 301: Symposium E – Rare-Earth Doped Semiconductors , 1993 , 133
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Ennen, H., Schneider, J., Pomrenke, G. and Axman, A. Appl. Phys. Lett. 43, 943 (1983)Google Scholar
[2] Whitney, P.S., Uwai, K., Nagagome, H. and Takakei, K., Electron. Lett. 24, 740 (1988)Google Scholar
[3] Favennec, P.N., L'Haridon, H., Salvi, M., Moutonnet, D. and Guillou, Y. Le Electron. Lett. 25, 718 (1989)Google Scholar
[4] Rochaix, C., Rolland, A., Favennec, P.N., Lambert, B., Corre, A. Le, L'Haridon, H. and Salvi, M. Jap. J. of Appl. Phys., 27 L 2348 (1988)Google Scholar
[5] Pomrenke, G., Ennen, H. and Haydl, W. J. Appl. Phys. 59, 610 (1986)Google Scholar
[6] Oestereich, T., Swiatkowski, G. and Broser, I. Appl. Phys. Lett., 56, 446 (1990)Google Scholar
[7] Beldi, N., Rahal, A., Hamouli, D., Aoucher, M., Mohammed-Brahim, T., Mencaraglia, D., Djebour, Z., , Chahed and Bouizem, Y. Proceedings of the 1 1th European Photovoltaic. Conference, Montreux (Switzerland), October 1992 Google Scholar