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1.54 μm Electroluminescence from Erbium Doped Gallium Phosphide Diodes

Published online by Cambridge University Press:  10 February 2011

G. M. Ford  and
B. W. Wessels
G. M. Ford
Affiliation:
Department of Materials Science and Engineering and the Materials Research Center, Northwestern University, Evanston, Illinois 60208
B. W. Wessels
Affiliation:
Department of Materials Science and Engineering and the Materials Research Center, Northwestern University, Evanston, Illinois 60208
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Abstract

Er-doped GaP diodes that exhibit strong room temperature characteristic 4f-shell luminescence under forward bias have been fabricated. The output of the diode increases linearly with current for low current densities but eventually saturates. The radiative decay lifetime is 2.6 msec and is independent of current. It is proposed that the observed intensity dependence on excitation power results from saturation of the optically active Er3+ centers. Some diodes showed a superlinear dependence, with a threshold of about 2 A/cm2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 422: Symposium D – Rare-Earth Doped Semiconductors II , 1996 , 345
Copyright
Copyright © Materials Research Society 1996

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