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1.5 μm In0.53Al0.14Ga0.33As/In0.52Al0.48As Distributed Bragg Reflector and Single Cavity Active Layer Grown with In-Situ Double Beam Laser Reflectometry

Published online by Cambridge University Press:  10 February 2011

Jong-Hyeob Baek ,
Bun Lee ,
Jin Hong Lee ,
Won Seok Han  and
El-Hang Lee
Jong-Hyeob Baek
Affiliation:
Electronics and Telecommunications Research Institute, Yusong P.O. BOX 106, Taejon 305–600, Republic of Korea
Bun Lee
Affiliation:
Electronics and Telecommunications Research Institute, Yusong P.O. BOX 106, Taejon 305–600, Republic of Korea
Jin Hong Lee
Affiliation:
Electronics and Telecommunications Research Institute, Yusong P.O. BOX 106, Taejon 305–600, Republic of Korea
Won Seok Han
Affiliation:
Physics Department, Chungnam National University, Taejon 305–600, Republic of Korea
El-Hang Lee
Affiliation:
Electronics and Telecommunications Research Institute, Yusong P.O. BOX 106, Taejon 305–600, Republic of Korea
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Abstract

We report the highly reflecting (>99.9%) In0.53Al0.14Ga0.33As/In0.52Al0.48As 30.5 pairs distributed Bragg reflector (DBR) and the In0.53Ga0.47As/ In0.52Al0.48As active cavity layer grown at high temperature by low pressure metal organic chemical vapor deposition with in-situ double beam laser reflectometry. One of the laser wavelengths selected for in-situ measurement was same as the DBR wavelength. The growth temperature was 750 °C. Good surface morphology of the multi-layer stacks was achieved by the temperature ramping of the InP buffer layer at the beginning of a multi-layer stacks. The width of stop band edge of the DBR reflectivity spectrum was found to be 1000Å.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 450: Symposium O – Infrared Applications of Semiconductors , 1996 , 159
Copyright
Copyright © Materials Research Society 1997

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References

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