Hostname: page-component-586b7cd67f-dlnhk Total loading time: 0 Render date: 2024-11-25T17:30:50.538Z Has data issue: false hasContentIssue false

(100) Oriented Platinum thin Films Deposited by Dc Magnetron Sputtering On SiO 2/Si Substrates

Published online by Cambridge University Press:  10 February 2011

Dong-Yeon Park
Affiliation:
Tong Yang Central Labs.,38-1 Jung, Kusung, Yongin, Kyungki 449-910, Korea
Dong-Su Lee
Affiliation:
Tong Yang Central Labs.,38-1 Jung, Kusung, Yongin, Kyungki 449-910, Korea
Min Hong Kim
Affiliation:
Division of Materials Science and Engineering, Seoul National University, Seoul, 151-742, Korea
Tae-Soon Park
Affiliation:
Division of Materials Science and Engineering, Seoul National University, Seoul, 151-742, Korea
Hyun-Jung Woo
Affiliation:
Tong Yang Central Labs.,38-1 Jung, Kusung, Yongin, Kyungki 449-910, Korea
Euijoon Yoon
Affiliation:
Division of Materials Science and Engineering, Seoul National University, Seoul, 151-742, Korea
Dong-ll Chun
Affiliation:
Tong Yang Central Labs.,38-1 Jung, Kusung, Yongin, Kyungki 449-910, Korea
Jowoong Ha
Affiliation:
Tong Yang Central Labs.,38-1 Jung, Kusung, Yongin, Kyungki 449-910, Korea
Get access

Abstract

Platinum(Pt) films were sputter-deposited on Si02/Si substrates under the mixed gas atmosphere of Ar and O2. Under certain deposition conditions, the films were oriented such that the (100) direction is normal to the substrate surface. The formation of the (100) texture was affected by the gas pressure and film thickness. After annealing at 650 °C for 1 hour, (100) oriented Pt films with the resistivity of pure Pt were obtained. The annealed Pt films all passed a tape adhesion test and had no defects such as hillocks or pinholes. The experimental results from this work are presented.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Okuyama, M. and Hamakawa, Y., Int. J. Eng. Sci., 29, 391 (1991)Google Scholar
2. Ogawa, T., Senda, A., Kasnami, T., Jap. J. of Appl. Phys., 30, 2145 (1991)Google Scholar
3. lijima, K., Tomita, Y., Takayama, R., and Ueda, I., J. Appl. Phys., 60, 361 (1986)Google Scholar
4. Kim, S. and Baik, S., J. Vac. Sci. Tech. A, 13, 95 (1995)Google Scholar
5. Narayan, J., Tiwari, P., Jagannadham, K., and Holland, O.W., Appl. Phys. Lett., 64, 2093 (1994)Google Scholar
6. Westwood, W. D. and Bennewitz, C. D., J. Appl. Phys., 45, 2313 (1974)Google Scholar
7. Lotgerling, F. K., J. Inorg. Nucl. Chem., 9, 113 (1959)Google Scholar
8. Van der Drift, A., Philips Res. Repts., 22, 267 (1967)Google Scholar
9. Ming, N. B. and Sunagawa, I., J. Cryst. Growth, 87, 13 (1988)Google Scholar
10. Gittis, A. and Dobrev, D., Thin Silid Films, 130, 335 (1985)Google Scholar
11. Pelleg, J., Zerin, L. Z., and , Lungo, Thin Silid Films, 117, 197 (1991)Google Scholar