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(001)-Oriented LaNiO3 Bottom Electrodes and (001)-Textured Ferroelectric Thin Films on LaNiO3

Published online by Cambridge University Press:  10 February 2011

Zhenshan Zhang
Affiliation:
Materials Research Laboratory and Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16802
Jeong Hwan Park
Affiliation:
Materials Research Laboratory and Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16802
Susan Trolier-McKinstry
Affiliation:
Materials Research Laboratory and Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA 16802
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Abstract

In this work, highly (001)pc-oriented thin films of LaNiO3 (LNO) were deposited by DC magnetron sputtering onto Si substrates (pc = pseudocubic indices). The target powder was prepared using a molten salt technique with Na2CO3 as a flux. The final target density was greater than 85% of theoretical density. The best results were obtained when sputtering was carried out at a power of 186 W and a working pressure of 45 mtorr with a gas composition of 50% O2 + 50% Ar. The thickness of the deposited films was proportional to the sputtering time, and the growth rate was 300Å/hour. Highly (001)-oriented thin films of lead zirconate titanate Pb(Zr0.52Ti0.48)O3 (PZT) and Pb[(Mg1/3Nb2/3)0.7Ti0.3]O3 (PMN-PT) were fabricated by a sol-gel method on (001)-textured LNO metallic oxide electrodes. A remanent polarization of 12 μC/cm2 and d31 of -125 pC/N (assuming a Young's modulus of 35 GPa) were measured on the PMN-PT thin films with a thickness of 0.9 μm. This piezoelectric coefficient considerably exceeds that available from PZT films, and depends critically on the film orientation. Changes in the hysteresis loop due to externally applied stress will also be described.

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

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